2SB919 [JMNIC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
2SB919
型号: 2SB919
厂家: QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述:

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:105K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB919  
DESCRIPTION  
·
·With TO-220C package  
·Complement to type 2SD1235  
·Low collector saturation voltage  
·Large current capacity  
APPLICATIONS  
·Large current switching of relay drivers,  
high-speed inverters,converters  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
CONDITIONS  
VALUE  
-60  
UNIT  
Open emitter  
Open base  
V
V
V
A
A
-30  
Open collector  
-6  
-8  
ICM  
-15  
Ta=25  
TC=25℃  
1.75  
30  
PC  
Collector dissipation  
W
Tj  
Junction temperature  
Storage temperature  
150  
-50~150  
Tstg  
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB919  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
ICBO  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Collector cut-off current  
CONDITIONS  
MIN  
-30  
-60  
-6  
TYP.  
MAX  
UNIT  
V
IC=-1mA; RBE=∞  
IC=-1mA; IE=0  
V
IE=-1mA; IC=0  
V
IC=-3A; IB=-0.15A  
VCB=-40V; IE=0  
VEB=-4V; IC=0  
-0.5  
-0.1  
-0.1  
280  
V
mA  
mA  
IEBO  
Emitter cut-off current  
hFE-1  
DC current gain  
IC=-1A ; VCE=-2V  
IC=-4A ; VCE=-2V  
IC=-1A ; VCE=-5V  
70  
30  
hFE-2  
DC current gain  
fT  
Transition frequency  
120  
MHz  
Switching times  
ton  
tstg  
tf  
Turn-on time  
0.1  
0.2  
μs  
μs  
μs  
IC=-4A ; VCC=-10V  
IB1=-IB2=-0.2A;RL=2.5Ω  
Storage time  
Turn-off time  
0.03  
‹ hFE-1Classifications  
Q
R
S
70-140  
100-200  
140-280  
2
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB919  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)  
3
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SB919  
4

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