2SB921 [SAVANTIC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
2SB921
型号: 2SB921
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB921  
DESCRIPTION  
·With TO-220C package  
·Complement to type 2SD1237  
·Low collector saturation voltage  
·Large current capacity  
APPLICATIONS  
·Suitable for relay drivers,high-speed  
inverters,converters,and other general  
large current switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
CONDITIONS  
VALUE  
-120  
-120  
-6  
UNIT  
Open emitter  
Open base  
V
V
V
A
A
Open collector  
-7  
ICM  
-12  
Ta=25ꢀ  
TC=25ꢀ  
1.75  
40  
PC  
Collector dissipation  
W
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-50~150  
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB921  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
-120  
-120  
-6  
TYP.  
MAX  
UNIT  
V
Collector-emitter breakdown voltage IC=-1mA; RBE=  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
IC=-1mA; IE=0  
V
IE=-1mA; IC=0  
V
IC=-4A; IB=-0.4A  
VCB=-80V; IE=0  
VEB=-4V; IC=0  
-0.5  
-0.1  
-0.1  
280  
V
mA  
mA  
IEBO  
hFE-1  
DC current gain  
IC=-1A ; VCE=-2V  
IC=-4A ; VCE=-2V  
IC=-1A ; VCE=-5V  
70  
30  
hFE-2  
DC current gain  
fT  
Transition frequency  
20  
MHz  
Switching times  
ton  
tstg  
tf  
Turn-on time  
0.2  
0.7  
0.2  
µs  
µs  
µs  
IC=-2A ; VCC=-50V  
IB1=-IB2=-0.2A;RL=1.67Ω  
Storage time  
Turn-off time  
hFE-1Classifications  
Q
R
S
70-140  
100-200 140-280  
2
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB921  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)  
3

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