2SB1375_2014 [JMNIC]
Silicon PNP Power Transistors;
| 型号： | 2SB1375_2014 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总4页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1375
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2012
·Low collector saturation voltage:
V
CE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A
·Collector power dissipation:
PC=25W(TC=25℃)
APPLICATIONS
·Audio frequency power amplifier
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-60
UNIT
V
V
V
A
A
Open base
-60
Open collector
-7
-3
IB
Base current
-0.5
2.0
Ta=25℃
TC=25℃
PC
Collector dissipation
W
25
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1375
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-50mA ;IB=0
-60
IC=-2A ;IB=-0.2A
IC=-0.5A;VCE=-5V
VCB=-60V; IE=0
-1.0
-1.5
-1.0
-10
V
-0.75
V
ICBO
Collector cut-off current
Emitter cut-off current
μA
μA
IEBO
VEB=-7V; IC=0
-10
hFE-1
hFE-2
fT
DC current gain
IC=-0.5A ; VCE=-5V
IC=-2A ; VCE=-5V
IC=-0.5A ; VCE=-5V
IE=0; f=1MHz;VCB=-10V
100
15
320
DC current gain
Transition frequency
9
MHz
pF
COB
Collector output capacitance
50
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1375
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1375
4
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