2SB1377R [PANASONIC]
Transistor, SIP-3;
| 型号： | 2SB1377R |
| 厂家： | 
PANASONIC |
| 描述： | Transistor, SIP-3 |
| 文件： | 总4页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SB1377
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SD2071
Unit: mm
2.5±0.1
1.05
±0.05
6.9.1
4.0
(1.45)
0.8
0.7
Features
Allowing supply with the radial taping.
■
●
0.65 m
Absolute Maximum Ratings (Ta=25˚C)
■
0.45+–00..105
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Un
V
2.5±2.5±0.5
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
–60
1
2
3
–50
–5
V
–1
00
A
Noten addition to the
1:Emitter
2:Collector
:Base
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
IC
mA
W
˚
˚C
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
MT2 Type Package
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper il area of 1cm2 or mord the oard
thickness of 1.7mm for thcollecor portion
1.2±0.1
0.65
max.
+
0.1
0.45–0.05
(HW type)
Electrcal Characteristics (Ta=25˚C)
■
Pameter
Symol
ICBO
Conditions
CB = –20V, IE = 0
min
typ
max
– 0.1
–1
Unit
V
µA
µA
V
Collectocuto
ICEO
VCE = –20V, IB = 0
Collector to base v
Collector to emitter vole
Emitter to base voltage
VCBO
VCE
VEBO
IC = –10µA, IE = 0
–60
–50
–5
IC = –2mA, IB = 0
V
IE = –10µA, IC = 0
V
*
hFE1
VCE = –10V, IC = –10mA
VCE = –10V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
85
160
90
340
Forward current transfer ratio
hFE2
40
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
– 0.35
–1.1
200
6
– 0.6
–1.5
V
V
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
15
*hFE1 Rank classification
Rank
hFE1
Q
R
S
85 ~ 170
120 ~ 240
170 ~ 340
1
2SB1377
Transistor
PC — Ta
IC — VCE
IC — IB
1.2
1.0
0.8
0.6
0.4
0.2
0
800
700
600
500
400
300
200
100
0
–800
–700
–600
–50
–400
0
0
00
0
Ta=25˚C
VCE=–10V
Ta=25˚C
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
20 40 60 80 100 120 140 160
0
–4
–8
–12
6
0
0
–2
–8
–10
(
)
( )
V
(
)
Ambient temperature Ta ˚C
Collector to emitter voltge VC
Base B mA
VCE(sat) — IC
VE(sat) IC
FE — IC
–100
–100
600
500
400
300
200
100
0
IC/IB=10
IC/IB=10
VCE=–10V
–30
–10
–30
–3
–1
–3
5˚C
Ta=–25˚C
75˚
Ta=75˚C
25˚C
Ta=75˚C
– 0.3
– 0.1
– 0.3
– 0.1
25˚C
–25˚C
–25˚C
– 0.03
– 0.01
– 0.03
– 0.01
– 0.01 0– 0.1
–3
–10
– 0.0– 0.03 – 0.1 – 0.3
–1
–3
–10
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
(
A
)
(
( )
Collector current IC A
olltor cIC
Collector current IC
fT — IE
Cob — VCB
VCER — RBE
240
200
160
120
80
24
20
16
12
8
–120
–100
–80
–60
–40
–20
0
IE=0
f=1MHz
Ta=25˚C
–10V
5˚C
IC=–2mA
Ta=25˚C
40
4
0
0
–1
1
3
10
30
100
–3
–10
–30
–100
1
3
10
30
100 300 1000
(
)
( )
V
(
)
Emitter current IE mA
Collector to base voltage VCB
Base to emitter resistance RBE kΩ
2
2SB1377
Transistor
ICEO — Ta
104
103
102
10
VCE=–10V
1
0
40
80
120
160
200
(
)
Ambient temperature Ta ˚C
3
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