2SA1263N [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1263N |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总4页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1263N
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SC3180N
·2SA1263 with short pin
APPLICATIONS
·Power amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
-80
UNIT
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
-80
V
Open collector
-5
V
-6
A
IB
Base current
-0.6
60
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1263N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-50mA ,IB=0
-80
IC=-5A; IB=-0.5A
IC=-3A ; VCE=-5V
VCB=-80V; IE=0
-1.0
-2.0
-1.5
-5
V
-0.95
V
ICBO
μA
μA
IEBO
VEB=-5V; IC=0
-5
hFE-1
hFE-2
fT
IC=-1A ; VCE=-5V
IC=-3A ; VCE=-5V
IC=-1A ; VCE=-5V
IE=0 ; VCB=-10V ;f=1MHz
55
35
160
DC current gain
Transition frequency
30
MHz
pF
Cob
Output capacitance
290
hFE-1 Classifications
R
O
55-110
80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1263N
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1263N
4
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