2SA1264N [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1264N |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总4页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1264N
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SC3181N
·2SA1264 with short pin
APPLICATIONS
·Power amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-120
-120
-5
UNIT
V
Open emitter
Open base
V
Open collector
V
-8
A
IB
Base current
-0.8
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1264N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
TYP. MAX UNIT
IC=-50mA ,IB=0
-120
V
IC=-6A; IB=-0.6A
IC=-4A ; VCE=-5V
VCB=-120V; IE=0
VEB=-5V; IC=0
-2.0
-1.5
-5
V
V
ICBO
Collector cut-off current
Emitter cut-off current
DC current gain
μA
μA
IEBO
-5
hFE-1
hFE-2
fT
IC=-1A ; VCE=-5V
IC=-4A ; VCE=-5V
IC=-1A ; VCE=-5V
IE=0 ; VCB=-10V ;f=1MHz
55
35
160
DC current gain
Transition frequency
30
MHz
pF
Cob
Output capacitance
420
hFE-1 Classifications
R
O
55-110
80-160
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1264N
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1264N
4
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