2N6833 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6833 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2N6833
DESCRIPTION
·With TO-220 package
·Hihg voltage,high speed
APPLICATIONS
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
850
450
V
Open collector
6
V
5
A
ICM
Collector current-peak
Base current
10
A
IB
4
8
A
IBM
Base current-peak
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
1.56
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2N6833
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBE sat
ICEV
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ;IB=0
Collector-emitter saturation voltage IC=1.5A;IB=0.15A
450
1.0
V
IC=3A;IB=0.4A
Collector-emitter saturation voltage
TC=100℃
2.5
2.5
V
IC=3A;IB=0.4A
Base-emitter saturation voltage
TC=100℃
1.5
1.5
V
VCE=850V;VBE=-1.5V
0.25
1.5
Collector cut-off current
mA
mA
TC=105℃
IEBO
Emitter cut-off current
DC current gain
VBE=6V; IC=0
1.0
30
hFE-1
IC=3A ; VCE=5V
7.5
5
hFE-2
DC current gain
IC=5A ; VCE=5V
Cob
Output capacitance
Transition frequency
IE=0 ; f=1kHz,VCB=10V
IC=0.25A ; VCE=10V;f=10MHz
20
15
200
75
pF
fT
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
2N6833
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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