2N6836 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6836 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6836
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Switching regulators
·Inverters
·Motor controls
·Deflection circuits
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
850
450
6
UNIT
V
Open base
V
Open collector
V
15
A
ICM
Collector current-peak
Base current
20
A
IB
10
A
IBM
Base current-peak
15
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
175
200
-65~200
W
ꢀ
Tj
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.0
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6836
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat
ICEV
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ;IB=0
Collector-emitter saturation voltage IC=5A; IB=0.7A
450
1.2
V
IC=10A; IB=1.0A
Collector-emitter saturation voltage
TC=100ꢀ
2.5
3.0
V
IC=10A; IB=1.0A
Base-emitter saturation voltage
TC=100ꢀ
1.5
1.5
V
VCE=850V; VBE=-1.5V
TC=100ꢀ
0.25
1.5
Collector cut-off current
Emitter cut-off current
DC current gain
mA
mA
IEBO
VEB=6V; IC=0
1.0
30
hFE-1
IC=10A ; VCE=5V
8
5
hFE-2
DC current gain
IC=15A ; VCE=5V
COB
Output capacitance
Transition frequency
IE=0 ; VCB=10V;f=1MHz
IC=0.25A ; VCE=10V;f=10MHz
50
10
400
75
pF
fT
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6836
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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