2N5956 [JMNIC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
2N5956
型号: 2N5956
厂家: QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述:

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Product Specification  
www.jmnic.com  
Silicon PNP Power Transistors  
2N5954 2N5955 2N5956  
DESCRIPTION  
·With TO-66 package  
·Low collector-emitter saturation voltage  
·Excellent safe operating area  
·Complement to type 2N6372 2N6373 2N6374  
APPLICATIONS  
·Designed for driver circuits,switching  
and amplifier applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Collector  
Fig.1 simplified outline (TO-66) and symbol  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N5954  
2N5955  
2N5956  
2N5954  
2N5955  
2N5956  
90  
70  
VCBO  
Collector-base voltage  
Open emitter  
V
50  
80  
VCEO  
Collector-emitter voltage  
Open base  
V
60  
40  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
6
IB  
Base current  
2
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
40  
W
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
4.3  
/W  
JMnic  
Product Specification  
www.jmnic.com  
Silicon PNP Power Transistors  
2N5954 2N5955 2N5956  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
80  
TYP.  
MAX  
UNIT  
2N5954  
2N5955  
2N5956  
2N5954  
2N5955  
2N5956  
2N5954  
2N5955  
2N5956  
Collector-emitter  
sustaining voltage  
VCEO(sus)  
IC=0.1A ;IB=0  
V
60  
40  
IC=2A; IB=0.2A  
IC=2.5A; IB=0.25A  
IC=3A; IB=0.3A  
IC=2A ; VCE=4V  
IC=2.5A ; VCE=4V  
IC=3A ; VCE=4V  
IC=6A ; VCE=4V  
VCE=65V; IB=0  
VCE=45V; IB=0  
Collector-emitter  
saturation voltage  
VCEsat  
1.0  
V
VBE-1  
VBE-2  
ICEO  
Base-emitter on voltage  
Base-emitter on voltage  
Collector cut-off current  
2.0  
3.0  
1.0  
V
V
2N5954  
2N5955  
2N5956  
mA  
V
CE=25V; IB=0  
V
CE=Rated VCE; VBE(off)=1.5V  
0.1  
2.0  
ICEV  
IEBO  
Collector cut-off current(RBE=100Ω)  
Emitter cut-off current  
2N5954  
mA  
mA  
TC=150℃  
VEB=5V; IC=0  
0.1  
IC=2A ; VCE=4V  
hFE-1  
DC current gain  
20  
100  
2N5955  
2N5956  
IC=2.5A ; VCE=4V  
IC=3A ; VCE=4V  
hFE-2  
fT  
DC current gain  
IC=6A ; VCE=4V  
5
5
Transition frequency  
IC=1A;VCE=4V;f=1.0MHz  
MHz  
JMnic  
Product Specification  
www.jmnic.com  
Silicon PNP Power Transistors  
2N5954 2N5955 2N5956  
PACKAGE OUTLINE  
Fig.2 outline dimensions  
JMnic  

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