2N5956 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管型号: | 2N5956 |
厂家: | QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
描述: | Silicon PNP Power Transistors |
文件: | 总3页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5954 2N5955 2N5956
DESCRIPTION
·With TO-66 package
·Low collector-emitter saturation voltage
·Excellent safe operating area
·Complement to type 2N6372 2N6373 2N6374
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
3
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N5954
2N5955
2N5956
2N5954
2N5955
2N5956
90
70
VCBO
Collector-base voltage
Open emitter
V
50
80
VCEO
Collector-emitter voltage
Open base
V
60
40
VEBO
IC
Emitter-base voltage
Collector current
Open collector
5
V
A
6
IB
Base current
2
A
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
150
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
4.3
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5954 2N5955 2N5956
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
80
TYP.
MAX
UNIT
2N5954
2N5955
2N5956
2N5954
2N5955
2N5956
2N5954
2N5955
2N5956
Collector-emitter
sustaining voltage
VCEO(sus)
IC=0.1A ;IB=0
V
60
40
IC=2A; IB=0.2A
IC=2.5A; IB=0.25A
IC=3A; IB=0.3A
IC=2A ; VCE=4V
IC=2.5A ; VCE=4V
IC=3A ; VCE=4V
IC=6A ; VCE=4V
VCE=65V; IB=0
VCE=45V; IB=0
Collector-emitter
saturation voltage
VCEsat
1.0
V
VBE-1
VBE-2
ICEO
Base-emitter on voltage
Base-emitter on voltage
Collector cut-off current
2.0
3.0
1.0
V
V
2N5954
2N5955
2N5956
mA
V
CE=25V; IB=0
V
CE=Rated VCE; VBE(off)=1.5V
0.1
2.0
ICEV
IEBO
Collector cut-off current(RBE=100Ω)
Emitter cut-off current
2N5954
mA
mA
TC=150℃
VEB=5V; IC=0
0.1
IC=2A ; VCE=4V
hFE-1
DC current gain
20
100
2N5955
2N5956
IC=2.5A ; VCE=4V
IC=3A ; VCE=4V
hFE-2
fT
DC current gain
IC=6A ; VCE=4V
5
5
Transition frequency
IC=1A;VCE=4V;f=1.0MHz
MHz
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5954 2N5955 2N5956
PACKAGE OUTLINE
Fig.2 outline dimensions
JMnic
相关型号:
2N5956E3
Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
MICROSEMI
2N5956LEADFREE
Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2
CENTRAL
2N5958
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin,
MICROSEMI
2N5958E3
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin,
MICROSEMI
2N5959E3
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
MICROSEMI
2N5960
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin,
MICROSEMI
©2020 ICPDF网 联系我们和版权申明