ACJT1010-10F [JIEJIE]

The ACJT10 series of double mesa technology provide high interference immunity;
ACJT1010-10F
型号: ACJT1010-10F
厂家: JIEJIE MICROELECTRONICS CO.,Ltd    JIEJIE MICROELECTRONICS CO.,Ltd
描述:

The ACJT10 series of double mesa technology provide high interference immunity

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JIEJIE MICROELECTRONICS CO. , Ltd  
ACJT10 Series 10A TRIACs  
Rev.3.0  
DESCRIPTION:  
The ACJT10 series of double mesa technology provide high  
interference immunity, They can be used as an static ON/OFF  
function in electrical control system, and used as a driver of  
low power and high inductance or resistive loads, such as  
jet pumps of dishwashers, fans of air-conditioner ...  
1
2
1
3
2
3
TO-220A  
Insulated  
TO-220B  
Non-Insulated  
ACJT10xx-xxA provides insulation voltage rated at 2500V  
RMS and ACJT10xx-xxF provides insulation voltage rated at  
2000V RMS from all three terminals to external heatsink.  
1
2
3
MAIN FEATURES  
TO-220F  
Insulated  
Symbol  
IT(RMS)  
Value  
10  
Unit  
A
T1(1)  
T2(2)  
VDRM /VRRM  
IGT  
1000  
V
G(3)  
10 or 35 or ≤50  
mA  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Tstg  
Value  
Unit  
Storage junction temperature range  
Operating junction temperature range  
Repetitive peak off-state voltage( Tj=25)  
Repetitive peak reverse voltage( Tj=25)  
Non repetitive surge peak Off-state voltage  
Non repetitive peak reverse voltage  
TO-220A(Ins) (TC=90)  
-40-150  
-40-125  
1000  
V
Tj  
VDRM  
VRRM  
VDSM  
VRSM  
1000  
V
VDRM +100  
VRRM +100  
V
V
RMS on-state  
current  
TO-220B(Non-Ins)  
(TC=100)  
IT(RMS)  
10  
A
TO-220F(Ins) (TC=84)  
Non repetitive surge peak on-state current  
(full cycle, F=50Hz)  
I2t value for fusing ( tp=10ms)  
ITSM  
I2t  
100  
55  
A
A2s  
TEL+86-513-83639777  
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http://www.jjwdz.com  
ACJT10 Series  
JieJie Microelectronics CO. , Ltd  
Rate of rise of on-state current (IG=2×IGT)  
Peak gate current  
dIT/dt  
IGM  
50  
2
A/μs  
A
Average gate power dissipation  
Peak gate power  
PG(AV)  
PGM  
0.1  
1
W
W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)  
Value  
Symbol  
Test Condition  
Quadrant  
Unit  
ACJT1010 ACJT1035 ACJT1050  
MAX  
MAX  
IGT  
--Ⅲ  
--Ⅲ  
10  
35  
50  
mA  
V
VD=12V RL=33Ω  
VGT  
1.4  
1.4  
1.5  
VD=VDRM Tj=125℃  
RL=3.3KΩ  
MIN  
VGD  
--Ⅲ  
0.2  
V
-Ⅲ  
20  
35  
20  
70  
80  
50  
80  
100  
70  
MAX  
IL  
mA  
IG=1.2IGT  
MAX  
MIN  
IH  
IT=100mA  
mA  
VD=2/3VDRM Gate Open  
Tj=125℃  
dV/dt  
500  
1500  
2000  
Vs  
STATIC CHARACTERISTICS  
Symbol  
Parameter  
Value(MAX)  
Unit  
V
VTM  
IDRM  
IRRM  
ITM=14A tp=380μs  
Tj=25℃  
Tj=25℃  
Tj=125℃  
1.55  
10  
μA  
mA  
VD=VDRM VR=VRRM  
1.5  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
3.1  
Unit  
TO-220A(Ins)  
Rth(j-c)  
junction to case(AC)  
TO-220B(Non-Ins)  
TO-220F(Ins)  
2.3  
/W  
3.5  
TEL+86-513-83639777  
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http://www.jjwdz.com  
ACJT10 Series  
JieJie Microelectronics CO. , Ltd  
ORDERING INFORMATION  
AC J T 10 35 -10 F  
A:TO-220A(Ins)  
F:TO-220F(Ins)  
B:TO-220B(Non-Ins)  
AC switch  
JieJie Microelectronics Co.,Ltd  
Triacs  
10:VDRM /VRRM1000V  
10: IGT1-310mA  
IT(RMS):10A  
35: IGT1-335mA  
50: IGT1-350mA  
PACKAGE MECHANICAL DATA  
Dimensions  
Ref.  
Millimeters  
Inches  
Typ.  
Typ.  
Min.  
4.40  
0.61  
0.46  
1.21  
2.40  
8.60  
9.80  
6.55  
Max.  
4.60  
0.88  
0.70  
1.32  
2.72  
9.70  
10.4  
6.95  
Min.  
0.173  
0.024  
0.018  
0.048  
0.094  
0.339  
0.386  
0.258  
Max.  
0.181  
0.035  
0.028  
0.052  
0.107  
0.382  
0.409  
0.274  
A
B
E
A
C2  
C
C2  
C3  
D
E
C3  
C
F
L2  
2.54  
3.75  
0.1  
G
28.0  
29.8  
H
1.102  
1.173  
0.148  
L1  
L2  
L3  
V1  
B
1.14  
2.65  
1.70  
2.95  
0.045  
0.104  
0.067  
0.116  
G
45°  
45°  
TO-220A Ins  
TEL+86-513-83639777  
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http://www.jjwdz.com  
ACJT10 Series  
JieJie Microelectronics CO. , Ltd  
PACKAGE MECHANICAL DATA  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
4.40  
0.61  
0.46  
1.21  
2.40  
8.60  
9.60  
6.20  
Max.  
4.60  
0.88  
0.70  
1.32  
2.72  
9.70  
10.4  
6.60  
Min.  
0.173  
0.024  
0.018  
0.048  
0.094  
0.339  
0.378  
0.244  
Max.  
0.181  
0.035  
0.028  
0.052  
0.107  
0.382  
0.409  
0.260  
A
B
E
A
C2  
C
C2  
C3  
D
E
JIE  
C3  
C
F
L2  
2.54  
3.75  
0.1  
G
28.0  
29.8  
H
1.102  
1.173  
0.148  
L1  
L2  
L3  
V1  
B
1.14  
2.65  
1.70  
2.95  
0.045  
0.104  
0.067  
0.116  
G
45°  
45°  
TO-220B Non-Ins  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
4.40  
0.74  
0.48  
2.40  
2.60  
8.80  
9.70  
6.40  
Max.  
Min.  
0.173  
0.029  
0.019  
0.094  
0.102  
0.346  
0.382  
0.252  
Max.  
.5mm  
A
4.80  
0.83  
0.75  
2.70  
3.00  
9.30  
10.3  
7.00  
0.189  
A
B
Max 3  
E
C2  
Φ
0.80  
0.031 0.033  
0.030  
0.106  
0.118  
0.366  
0.406  
0.276  
0.1  
C
C2  
C3  
D
E
C3  
F
L2  
2.54  
3.63  
G
28.0  
1.14  
29.8  
1.70  
H
1.102  
0.045  
1.173  
0.143  
0.067  
0.130  
45°  
L1  
L2  
L3  
V1  
B
C
G
3.30  
45°  
TO-220F Ins  
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ACJT10 Series  
FIG.1 Maximum power dissipation versus RMS  
JieJie Microelectronics CO. , Ltd  
FIG.2: RMS on-state current versus case  
on-state current  
temperature  
IT(RMS) (A)  
12  
P(w)  
15  
α=180°  
TO-220B(Non-Ins)  
10  
10  
5
8
TO-220A(Ins)  
6
4
TO-220F(Ins)  
2
IT(RMS) (A)  
Tc ()  
0
0
0
0
2
4
6
8
10  
25  
50  
75  
100  
125  
FIG.3: Surge peak on-state current versus  
FIG.4: On-state characteristics (maximum  
number of cycles  
values)  
ITM (A)  
24  
ITSM (A)  
105  
90  
75  
60  
45  
30  
t=20ms  
One cycle  
18  
12  
Tj=25  
Tj=125℃  
6
0
15  
0
VTM (V)  
Number of cycles  
100  
0
0.5  
1.0  
1.5  
2.0  
2.5  
1
10  
1000  
FIG.6: Relative variations of holding current,  
latching curretn versus junction temperature  
FIG.5: Relative variations of gate trigger current  
versus junction temperature  
IH,IL(Tj) /IH,IL(Tj=25)  
IGT(Tj) /IGT(Tj=25)  
3.0  
3.0  
2.5  
2.0  
2.5  
2.0  
IH  
IGT3  
IGT1&IGT2  
IL  
1.5  
1.0  
1.5  
1.0  
0.5  
0.0  
0.5  
0.0  
Tj ()  
40 60  
Tj ()  
40 60  
-40 -20  
0
20  
80 100 120 140  
-40 -20  
0
20  
80 100 120 140  
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu  
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without  
consideration for such information nor use beyond it.  
Information mentioned in this document is subject to change without notice, apart from that when  
an agreement is signed, Jiangsu JieJie complies with the agreement.  
Products and information provided in this document have no infringement of patents. Jiangsu  
JieJie assumes no responsibility for any infringement of other rights of third parties which may  
result from the use of such products and information.  
This document is the third version which is made in 12-June-2015. This document supersedes  
and replaces all information previously supplied.  
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.  
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.  
TEL+86-513-83639777  
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http://www.jjwdz.com  

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