ACJT105-10U [JIEJIE]

1A TRIACs;
ACJT105-10U
型号: ACJT105-10U
厂家: JIEJIE MICROELECTRONICS CO.,Ltd    JIEJIE MICROELECTRONICS CO.,Ltd
描述:

1A TRIACs

三端双向交流开关
文件: 总5页 (文件大小:376K)
中文:  中文翻译
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JIEJIE MICROELECTRONICS CO. , Ltd  
ACJT1 Series  
1A TRIACs  
Rev.3.0  
DESCRIPTION:  
ACJT1 series triacs with high ability to withstand the  
shock loading of large current provide high dv/dt rate  
with strong resistance to electromagnetic interference.  
They are especially recommended for use on inductive  
load and serious electromagnetic interference place.  
1
1
2
2
3
3
SOT-89  
SOT-223  
MAIN FEATURES  
1
3
2
TO-92  
Symbol  
Value  
1
Unit  
A
IT(RMS)  
T2(2)  
T1(1)  
VDRM /VRRM  
IGT  
1000  
V
G(3)  
≤5 or ≤10  
mA  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Tstg  
Value  
-40-150  
-40-125  
1000  
Unit  
Storage junction temperature range  
Operating junction temperature range  
V
Tj  
Repetitive peak off-state voltage( Tj=25)  
Repetitive peak reverse voltage( Tj=25)  
Non repetitive surge peak Off-state voltage  
VDRM  
VRRM  
VDSM  
VRSM  
1000  
V
VDRM +100  
VRRM +100  
V
Non repetitive peak reverse voltage  
SOT-89/ SOT-223  
V
(TC=70)  
RMS on-state current  
IT(RMS)  
1
A
TO-92 (TC=57)  
Non repetitive surge peak on-state current  
( full cycle, F=50Hz)  
ITSM  
10  
A
I2t value for fusing ( tp=10ms)  
Rate of rise of on-state current (IG=2×IGT)  
Peak gate current  
I2t  
1.12  
50  
A2s  
A/μs  
A
dIT/dt  
IGM  
1
Average gate power dissipation  
PG(AV)  
0.2  
W
TEL+86-513-83639777  
- 1 / 5-  
http://www.jjwdz.com  
ACJT1 Series  
JieJie Microelectronics CO. , Ltd  
Peak gate power  
PGM  
1
W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)  
Value  
Symbol  
Test Condition  
Quadrant  
Unit  
ACJT105 ACJT110  
IGT  
--Ⅲ  
--Ⅲ  
MAX  
MAX  
5
10  
mA  
V
VD=12V RL=33Ω  
VGT  
1.4  
1.5  
VD=VDRM Tj=125℃  
RL=3.3KΩ  
VGD  
--Ⅲ  
MIN  
0.2  
V
-Ⅲ  
15  
25  
25  
35  
IL  
MAX  
mA  
IG=1.2IGT  
IH  
IT=100mA  
MAX  
MIN  
10  
20  
mA  
dV/dt  
VD=2/3VDRM Gate Open Tj=125℃  
400  
600  
Vs  
STATIC CHARACTERISTICS  
Symbol  
Parameter  
Value(MAX)  
Unit  
V
VTM  
IDRM  
IRRM  
ITM=1.4A tp=380μs  
Tj=25℃  
1.5  
10  
Tj=25℃  
μA  
mA  
VD=VDRM VR=VRRM  
Tj=125℃  
0.5  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
60  
Unit  
TO-92  
Rth(j-c)  
junction to case(AC)  
SOT-223  
SOT-89  
31  
/W  
44  
TEL+86-513-83639777  
- 2 / 5-  
http://www.jjwdz.com  
ACJT1 Series  
JieJie Microelectronics CO. , Ltd  
ORDERING INFORMATION  
AC J T 1 05 -10 U  
V:SOT-223  
U:TO-92 N:SOT-89  
AC switch  
JieJie Microelectronics Co.,Ltd  
10:VDRM /VRRM1000V  
05: IGT1-35mA  
10: IGT1-310mA  
Triacs  
IT(RMS):1A  
PACKAGE MECHANICAL DATA  
TEL+86-513-83639777  
- 3 / 5-  
http://www.jjwdz.com  
ACJT1 Series  
JieJie Microelectronics CO. , Ltd  
PACKAGE MECHANICAL DATA  
N
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
4.45  
4.32  
3.18  
0.407  
0.60  
-
Max.  
5.20  
5.33  
4.19  
Min.  
0.175  
0.170  
0.125  
Max.  
0.205  
0.210  
0.165  
0.021  
0.031  
-
V
A
A
B
C
D
E
F
0.533 0.016  
0.80  
-
0.024  
1.1  
-
-
0.043  
0.050  
0.091  
E
-
1.27  
2.30  
-
-
G
H
J
-
-
-
-
0.36  
12.70  
2.04  
1.86  
-
0.50  
15.0  
2.66  
2.06  
4.3  
0.014  
0.500  
0.080  
0.073  
-
0.020  
0.591  
0.105  
0.081  
0.169  
K
N
P
V
D
J
G
TO-92  
FIG.1 Maximum power dissipation versus RMS  
FIG.2: RMS on-state current versus case  
on-state current  
temperature  
IT(RMS) (A)  
1.5  
P(w)  
1.5  
α=180°  
TO-92  
SOT-89/  
SOT-223  
1.0  
1.0  
0.5  
0
0.5  
0
IT(RMS) (A)  
Tc ()  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
25  
50  
75  
100  
125  
FIG.3: Surge peak on-state current versus  
FIG.4: On-state characteristics (maximum  
number of cycles  
values)  
ITM (A)  
ITSM (A)  
2.0  
14  
12  
t=20ms  
One cycle  
1.5  
1.0  
10  
8
Tj=125  
Tj=25℃  
6
4
0.5  
0
2
VTM (V)  
2.0 2.5  
Number of cycles  
100  
0
0
0.5  
1.0  
1.5  
1
10  
1000  
TEL+86-513-83639777  
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http://www.jjwdz.com  
ACJT1 Series  
JieJie Microelectronics CO. , Ltd  
FIG.6: Relative variations of holding current,  
latching curretn versus junction temperature  
FIG.5: Relative variations of gate trigger current  
versus junction temperature  
IH,IL(Tj) /IH,IL(Tj=25)  
IGT(Tj) /IGT(Tj=25)  
3.0  
3.0  
2.5  
2.5  
2.0  
IH  
2.0  
IGT3  
IL  
1.5  
1.5  
IGT1&IGT2  
1.0  
0.5  
1.0  
0.5  
Tj ()  
Tj ()  
0.0  
-40 -20  
0.0  
0
20  
40  
60  
80 100 120 140  
-40 -20  
0
20  
40  
60  
80 100 120 140  
Information furnished in this document is believed to be accurate and reliable. However,  
Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences  
of use without consideration for such information nor use beyond it.  
Information mentioned in this document is subject to change without notice, apart from  
that when an agreement is signed, Jiangsu JieJie complies with the agreement.  
Products and information provided in this document have no infringement of patents.  
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third  
parties which may result from the use of such products and information.  
This document is the third version which is made in 22-June-2015. This document  
supersedes and replaces all information previously supplied.  
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.  
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.  
TEL+86-513-83639777  
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http://www.jjwdz.com  

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