ACJT105-10U [JIEJIE]
1A TRIACs;
| 型号： | ACJT105-10U |
| 厂家： | 
JIEJIE MICROELECTRONICS CO.,Ltd |
| 描述： | 1A TRIACs 三端双向交流开关 |
| 文件： | 总5页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIEJIE MICROELECTRONICS CO. , Ltd
ACJT1 Series
1A TRIACs
Rev.3.0
DESCRIPTION:
ACJT1 series triacs with high ability to withstand the
shock loading of large current provide high dv/dt rate
with strong resistance to electromagnetic interference.
They are especially recommended for use on inductive
load and serious electromagnetic interference place.
1
1
2
2
3
3
SOT-89
SOT-223
MAIN FEATURES
1
3
2
TO-92
Symbol
Value
1
Unit
A
IT(RMS)
T2(2)
T1(1)
VDRM /VRRM
IGT
1000
V
G(3)
≤5 or ≤10
mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
-40-150
-40-125
1000
Unit
Storage junction temperature range
Operating junction temperature range
℃
℃
V
Tj
Repetitive peak off-state voltage( Tj=25℃)
Repetitive peak reverse voltage( Tj=25℃)
Non repetitive surge peak Off-state voltage
VDRM
VRRM
VDSM
VRSM
1000
V
VDRM +100
VRRM +100
V
Non repetitive peak reverse voltage
SOT-89/ SOT-223
V
(TC=70℃)
RMS on-state current
IT(RMS)
1
A
TO-92 (TC=57℃)
Non repetitive surge peak on-state current
( full cycle, F=50Hz)
ITSM
10
A
I2t value for fusing ( tp=10ms)
Rate of rise of on-state current (IG=2×IGT)
Peak gate current
I2t
1.12
50
A2s
A/μs
A
dIT/dt
IGM
1
Average gate power dissipation
PG(AV)
0.2
W
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ACJT1 Series
JieJie Microelectronics CO. , Ltd
Peak gate power
PGM
1
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
ACJT105 ACJT110
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
MAX
MAX
5
10
mA
V
VD=12V RL=33Ω
VGT
1.4
1.5
VD=VDRM Tj=125℃
RL=3.3KΩ
VGD
Ⅰ-Ⅱ-Ⅲ
MIN
0.2
V
Ⅰ-Ⅲ
15
25
25
35
IL
MAX
mA
IG=1.2IGT
Ⅱ
IH
IT=100mA
MAX
MIN
10
20
mA
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
400
600
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=1.4A tp=380μs
Tj=25℃
1.5
10
Tj=25℃
μA
mA
VD=VDRM VR=VRRM
Tj=125℃
0.5
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
TO-92
Rth(j-c)
junction to case(AC)
SOT-223
SOT-89
31
℃/W
44
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ACJT1 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
AC J T 1 05 -10 U
V:SOT-223
U:TO-92 N:SOT-89
AC switch
JieJie Microelectronics Co.,Ltd
10:VDRM /VRRM≥1000V
05: IGT1-3≤5mA
10: IGT1-3≤10mA
Triacs
IT(RMS):1A
PACKAGE MECHANICAL DATA
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ACJT1 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
N
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.45
4.32
3.18
0.407
0.60
-
Max.
5.20
5.33
4.19
Min.
0.175
0.170
0.125
Max.
0.205
0.210
0.165
0.021
0.031
-
V
A
A
B
C
D
E
F
0.533 0.016
0.80
-
0.024
1.1
-
-
0.043
0.050
0.091
E
-
1.27
2.30
-
-
G
H
J
-
-
-
-
0.36
12.70
2.04
1.86
-
0.50
15.0
2.66
2.06
4.3
0.014
0.500
0.080
0.073
-
0.020
0.591
0.105
0.081
0.169
K
N
P
V
D
J
G
TO-92
FIG.1 Maximum power dissipation versus RMS
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
1.5
P(w)
1.5
α=180°
TO-92
SOT-89/
SOT-223
1.0
1.0
0.5
0
0.5
0
IT(RMS) (A)
Tc (℃)
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
ITSM (A)
2.0
14
12
t=20ms
One cycle
1.5
1.0
10
8
Tj=125℃
Tj=25℃
6
4
0.5
0
2
VTM (V)
2.0 2.5
Number of cycles
100
0
0
0.5
1.0
1.5
1
10
1000
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ACJT1 Series
JieJie Microelectronics CO. , Ltd
FIG.6: Relative variations of holding current,
latching curretn versus junction temperature
FIG.5: Relative variations of gate trigger current
versus junction temperature
IH,IL(Tj) /IH,IL(Tj=25℃)
IGT(Tj) /IGT(Tj=25℃)
3.0
3.0
2.5
2.5
2.0
IH
2.0
IGT3
IL
1.5
1.5
IGT1&IGT2
1.0
0.5
1.0
0.5
Tj (℃)
Tj (℃)
0.0
-40 -20
0.0
0
20
40
60
80 100 120 140
-40 -20
0
20
40
60
80 100 120 140
Information furnished in this document is believed to be accurate and reliable. However,
Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences
of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from
that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 22-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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