D882Y(TO-252-2) [JCST]
Transistor,;
| 型号： | D882Y(TO-252-2) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor, |
| 文件： | 总1页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/252 Plastic-Encapsulate Transistors
6. 50¡ À0. 10
5. 30¡ À0. 05
2. 30¡ À0. 05
0. 51¡ À0. 03
TO-251
TO-252-2
D882 TRANSISTOR (NPN)
5¡
ã
5¡ ã
0. 80¡ À0. 05
FEATURES
0. 60¡ À0. 05
1. BASE
2. 30¡ À0
1. 20
0. 51¡ À0. 03
Power dissipation
PCM
1 2 3
2. COLLECTOR
3. EMITTER
6. 50¡ À0. 15
2. 30¡ À0. 10
5. 30¡ À0. 10
:
1.25 W (Tamb=25℃)
0. 51¡ À0. 05
1. 20
0. 51¡ À0. 10
0¡ «0. 10
Collector current
ICM:
5¡
ã
5¡
ã
3
A
V
0. 80¡ À0. 10
0. 60¡ À0. 10
0
2. 30¡ À0. 10
0¡
ã
9«¡
¡
ã
Collector-base voltage
V(BR)CBO 40
0. 51
1 2 3
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100µA, IE=0
Ic= 10 mA, IB=0
IE= 100µA, IC=0
VCB= 40V, IE=0
MIN
40
30
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
1
10
1
µA
µA
µA
ICEO
VCE= 30V, IB=0
Collector cut-off current
IEBO
VEB= 6V, IC=0
Emitter cut-off current
hFE(1)
VCE= 2V, IC= 1A
VCE= 2V, IC= 100mA
IC= 2A, IB= 0.2 A
IC= 2A, IB= 0.2 A
60
32
400
DC current gain
hFE(2)
VCE (sat)
VBE (sat)
0.5
1.5
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE= 5V, Ic=0.1A
fT
50
MHz
Transition frequency
f =10MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
200-400
60-120
100-200
160-320
Range
相关型号：
D882Y-BP
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126, 3 PIN
MCC
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