D888 [STMICROELECTRONICS]
Medium Current, High Performance, Low Voltage PNP Transistor; 中等电流，高性能，低电压PNP晶体管
| 型号： | D888 |
| 厂家： | 
ST |
| 描述： | Medium Current, High Performance, Low Voltage PNP Transistor |
| 文件： | 总10页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD888T4
Medium Current, High Performance, Low Voltage
PNP Transistor
General features
■ Very low Collector to Emitter saturation voltage
■ D.C. Current gain, h >100
FE
■ 5A continuous collector current
■ Surface mounting DPAK(TO-252) power
package in tape & reel packing
3
■ In compliance with the 2002/93/EC European
1
Directive
DPAK
(TO-252)
Description
The device in manufactured in low voltage PNP
Planar Technology by using a “Base Island”
layout. The resulting transistor shows exceptional
high gain performance coupled with very low
saturation voltage.
Internal schematic diagram
Applications
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger
applications
■ Heavy load driver
Order codes
Part Number
Marking
Package
DPAK
Packing
STD888T4
D888
Tape & reel
April 2006
Rev 2
1/10
www.st.com
10
STD888T4
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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STD888T4
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
Collector-base voltage (I = 0)
-45
-30
V
V
CBO
E
V
Collector-emitter voltage (I = 0)
CEO
B
V
Emitter-base voltage (I = 0)
-6
V
EBO
C
I
Collector current
-5
A
C
I
Collector peak current (t < 5ms)
-10
A
CM
P
P
Total dissipation at T = 25°C
15
W
°C
°C
tot
c
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
R
Thermal resistance junction-case
__max
8.33
°C/W
thj-case
3/10
Electrical characteristics
STD888T4
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
V
V
= -30V
Collector cut-off current
-10
µA
µA
CB
CB
I
CBO
EBO
(I =0)
= -30V; T = 100°C
100
E
C
Emitter cut-off current
I
V
= -6V
-10
µA
EB
(I =0)
C
Collector-emitter
breakdown voltage
(2)
V
(BR)CEO
I = -10mA
-30
V
C
(I =0)
B
Collector-base
breakdown voltage
V
V
I = -100µA
-45
-6
V
V
(BR)CBO
C
(I =0)
E
Emitter-base breakdown
I = -100µA
(BR)EBO
E
voltage (I =0)
C
I = -0.5A
I = -5mA
-0.15
-0.35
-0.7
V
V
V
V
V
V
(2)
C
B
V
Collector-emitter
saturation voltage
CE(sat)
I = -2A
I = -50mA
B
C
I = -5A
I = -250mA
C
B
I = -6A
I = -250mA
-0.7
-1
C
B
I = -8A
I = -400mA
C
B
I = -10A
I = -500mA
-1.2
C
B
I = -2A
I = -50mA
-1.1
300
V
V
C
B
Base-emitter saturation
voltage
(2)
V
BE(sat)
I = -6A
I = -250mA
-1.2
C
B
120
100
70
200
200
100
I = -10mA
V
= -1V
CE
C
I = -500mA V = -1V
C
CE
CE
CE
I = -5A
V
V
= -1V
= -1V
C
(2)
I = -5A
DC current gain
h
C
FE
T = 100°C
100
55
C
I = -8A
V
V
= -1V
= -1V
C
CE
CE
I = -10A
35
C
Resistive load
Delay time
Rise time
I = -3A
V
= -20V
CC
C
t
180
160
250
80
220
210
300
100
ns
ns
ns
ns
d
I
I
-60mA
B1 = - B2 =
t
r
(see figure 7)
t
Storage time
Fall time
s
t
f
Note (2) Pulsed duration = 300 µs, duty cycle ≤1.5%
4/10
STD888T4
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Figure 3.
Figure 5.
DC current gain
Figure 2.
DC current gain
Collector-emitter saturation Figure 4.
voltage
Base-emitter saturation
voltage
Switching time resistive load Figure 6.
Switching time resistive load
5/10
Electrical characteristics
STD888T4
2.2
Test circuits
Figure 7.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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STD888T4
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/10
Package mechanical data
STD888T4
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
A
A1
A2
B
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
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STD888T4
Revision history
4
Revision history
Table 4.
Date
Revision history
Revision
Changes
24-Mar-2004
03-Apr-2006
1
2
Initial release.
New template.
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STD888T4
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