2SD2137Q(TO-220) [JCST]
Transistor;
| 型号： | 2SD2137Q(TO-220) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TO-220
2SD2137 TRANSISTOR (NPN)
FEATURES
1. BASE
z
z
z
High forward current transfer ratio hFE which has satisfactory linearity
2. COLLECTOR
3. EMITTER
Low collector to emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
Units
V
60
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
60
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
3
2
A
PC
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO IC=0.1mA, IE=0
V(BR)CEO IC=30mA, IB=0
V(BR)EBO IE=0.1mA, IC=0
60
60
6
V
V
V
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
VCB=60V, IE=0
VEB=6V, IC=0
VCE=4V, IC=1A
VCE=4V, IC=3A
100
100
320
μA
μA
70
10
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Turn-on time
IC=3A, IB=375mA
1.2
1.8
V
V
VCE=4V, IC=3A
VCE=5V, IC=0.2A, f=10MHz
30
0.3
2.5
0.2
MHz
μs
ton
Switch time
tstg
VCC=50V,IC=1A, IB1=-IB2=0.1A
μs
Storage time
Fall time
tf
μs
CLASSIFICATION OF hFE(1)
Rank
Q
P
O
Range
70-150
120-250
160-320
A,Mar,2011
Typical Characteristics
2SD2137
A,Mar,2011
相关型号：
2SD2139
Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)
PANASONIC
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