2SD2138Q [ETC]
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR ; 晶体管| BJT |达林顿| NPN | 60V V（ BR ） CEO | 2A I（C ） | TO- 221VAR\n
| 型号： | 2SD2138Q |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-221VAR
|
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type Darlington
Unit: mm
For power amplification
10.0 0.ꢀ
5.0 0.1
1.0 0.ꢀ
Complementary to 2SB1418 and 2SB1418A
I Features
•
High forward current transfer ratio hFE which has satisfactory
linearity
Allowing supply with the radial taping
1.ꢀ 0.1
C 1.0
1.48 0.ꢀ
ꢀ.ꢀ5 0.ꢀ
•
0.65 0.1
0.35 0.1
0.65 0.1
I Absolute Maximum Ratings TC = 25°C
1.05 0.1
0.55 0.1
0.55 0.1
Parameter
Symbol
Rating
Unit
ꢀ.5 0.ꢀ
ꢀ.5 0.ꢀ
2SD2138
2SD2138A
2SD2138
2SD2138A
VCBO
60
V
Collector to base
1
ꢀ 3
voltage
80
1: Emitter
2: Collector
3: Base
VCEO
60
V
Collector to
emitter voltage
80
MT-4 (MT4 Type Package)
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
5
V
A
Internal Connection
4
C
2
A
TC = 25°C
Ta = 25°C
PC
15
W
Collector power
dissipation
B
2
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
E
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
VCE = 60 V, IE = 0
CE = 80 V, IE = 0
Min
Typ
Max
100
100
100
100
100
Unit
2SD2138
2SD2138A
2SD2138
2SD2138A
ICBO
µA
Collector cutoff
current
V
ICEO
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
IC = 30 mA, IB = 0
µA
Collector cutoff
current
Emitter cutoff current
IEBO
µA
2SD2138
VCEO
60
80
V
Collector to emitter
voltage
2SD2138A
Forward current transfer ratio
hFE1
VCE = 4 V, IC = 1 A
1 000
2 000
*
hFE2
VCE = 4 V, IC = 2 A
10 000
2.8
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
VBE
VCE(sat)
fT
VCE = 4 V, IC = 2 A
V
V
IC = 2 A, IB = 8 mA
2.5
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 2 A, IB1 = 8 mA, IB2 = −8 mA,
VCC = 50 V
20
0.4
4
MHz
µs
ton
Turn-off time
toff
µs
Note) : Rank classification
*
Rank
Q
R
hFE2
2 000 to 5 000 4 000 to 10 000
1
2SD2138, 2SD2138A
Power Transistors
PC Ta
IC VCE
VCE(sat) IC
20
6
5
4
3
2
1
0
100
IC/IB=250
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
30
10
IB=2mA
15
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
(1)
3
1
TC=–25˚C
10
5
25˚C
0.4mA
100˚C
0.2mA
0.3
0.1
0.03
0.01
(2)
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01 0.03
0.1
0.3
1
3
10
(
)
(
)
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
V
IC VBE
hFE IC
Cob VCB
6
5
4
3
2
1
0
105
1000
VCE=4V
IE=0
f=1MHz
TC=25˚C
VCE=4V
25˚C
–25˚C
300
100
TC=100˚C
TC=100˚C
104
103
102
25˚C
30
10
–25˚C
3
1
0
1
2
3
4
0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
( )
V
(
)
( )
Collector to base voltage VCB V
Base to emitter voltage VBE
Collector current IC
A
Area of safe operation (ASO)
Rth(t) t
100
10000
1000
100
10
Non repetitive pulse
TC=25˚C
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
30
10
(2) With a 50 × 50 × 2mm Al heat sink
ICP
3
1
t=1ms
(1)
(2)
IC
DC
0.3
0.1
10ms
1
0.03
0.01
0.1
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
ꢀ
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2001 MAR
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