2SD2139Q [ETC]
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR ; 晶体管| BJT | NPN | 60V V（ BR ） CEO | 3A I（C ） | TO- 221VAR\n
| 型号： | 2SD2139Q |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR
|
| 文件： | 总4页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2139
Silicon NPN triple diffusion planar type
Unit: mm
For high-current amplification ratio, power amplification
10.0 0.ꢀ
5.0 0.1
1.0 0.ꢀ
I Features
•
•
•
High forward current transfer ratio hFE
Satisfactory linearity of forward current transfer ratio hFE
Allowing supply with the radial taping
1.ꢀ 0.1
C 1.0
1.48 0.ꢀ
ꢀ.ꢀ5 0.ꢀ
0.65 0.1
0.35 0.1
0.65 0.1
I Absolute Maximum Ratings TC = 25°C
1.05 0.1
0.55 0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
0.55 0.1
80
ꢀ.5 0.ꢀ
ꢀ.5 0.ꢀ
60
V
1
ꢀ 3
6
V
1: Base
2: Collector
3: Emitter
6
A
IC
3
A
MT-4 (MT4 Type Package)
Base current
IB
1
A
TC = 25°C
Ta = 25°C
PC
15
W
Collector power
dissipation
2
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
I Electrical Characteristics TC = 25°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
100
100
100
Unit
µA
µA
µA
V
Collector cutoff current
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
ICEO
Emitter cutoff current
IEBO
Collector to emitter voltage
Forward current transfer ratio *
Collector to emitter saturation voltage
Transition frequency
VCEO
hFE
IC = 25 mA, IB = 0
VCE = 4 V, IC = 0.5 A
IC = 2 A, IB = 0.05 A
60
500
2 500
1
VCE(sat)
fT
V
VCE = 12 V, IC = 0.2 A, f = 10 MHz
50
MHz
Note) : Rank classification
*
Rank
Q
P
O
hFE
500 to 1 000 800 to 1 500 1 200 to 2 500
1
2SD2139
Power Transistors
PC Ta
IC VCE
IC VBE
20
15
10
5
1.2
1.0
0.8
0.6
0.4
0.2
0
6
5
4
3
2
1
0
IB=1.6mA
1.4mA
TC=25˚C
VCE=4V
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
1.2mA
1.0mA
(1)
0.8mA
0.6mA
0.4mA
TC=100˚C
25˚C
0.2mA
–25˚C
(2)
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
(
)
(
V
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
V
Base to emitter voltage VBE
VCE(sat) IC
hFE IC
fT IC
100
10000
1000
IC/IB=40
VCE=4V
VCE=12V
f=10MHz
TC=25˚C
30
10
3000
1000
300
100
TC=100˚C
TC=100˚C
3
1
25˚C
–25˚C
300
100
30
10
–25˚C
0.3
0.1
30
10
3
1
0.03
0.01
25˚C
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
(
)
(
)
( )
Collector current IC A
Collector current IC
A
Collector current IC
A
Cob VCB
Area of safe operation (ASO)
1000
100
IE=0
Non repetitive pulse
f=1MHz
TC=25˚C
TC=25˚C
30
10
300
100
ICP
t=10ms
3
1
1ms
IC
DC
30
10
0.3
0.1
3
1
0.03
0.01
1
3
10
30
100
1
3
10
30
100 300 1000
(
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
V
ꢀ
Power Transistors
2SD2139
Rth(t) t
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
1000
100
10
(1)
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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2001 MAR
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