2SD2137AQ [JCST]
Transistor;
| 型号： | 2SD2137AQ |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TO – 220
2SD2137A TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
z
High DC Current Gain
Low Collector to Emitter Saturation Voltage VCE(sat)
Allowing Automatic Insertion with Radial Taping
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
80
Collector-Emitter Voltage
Emitter-Base Voltage
80
V
6
V
Collector Current
3
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
W
RθJA
Tj
63
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
80
80
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=100µA,IE=0
IC=30mA,IB=0
V
IE=100µA,IC=0
VCB=80V,IE=0
V
100
100
100
320
μA
μA
μA
Collector cut-off current
ICEO
VCE=60V,IB=0
Emitter cut-off current
IEBO
VEB=6V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=4V, IC=1A
VCE=4V, IC=3A
IC=3A,IB=0.375A
VCE=4V, IC=3A
VCE=5V,IC=0.2A, f=10MHz
70
10
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
1.2
1.8
V
V
fT
30
MHz
Transition frequency
CLASSIFICATION OF hFE(1)
RANK
Q
P
O
RANGE
70-150
120-250
160-320
A,Dec,2010
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