2SD1761D [JCST]
Transistor;
| 型号： | 2SD1761D |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD1761 TRANSISTOR (NPN)
TO-220F
1. BASE
FEATURES
z
Low collector saturation voltage:
ce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
2. COLLECTOR
3. EMITTER
V
z
z
z
Excellent current characteristics of DC current gain.
Large collector power dissipation: PC=30W(TC=25℃)
Complementary pair with 2SB1187
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
80
60
V
5
V
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
3
2
A
pC
W
℃
℃
TJ
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
80
60
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=50uA, IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50uA,IC=0
V
V
ICBO
IEBO
VCB=60V,IE=0
10
10
uA
uA
Emitter cut-off current
VEB=4V,IC=0
DC current gain
hFE(1)
VCE(sat)
VBE(sat)
fT
VCE=5V,IC=0.5A
IC=2A,IB=0.2A
IC=2A,IB=0.2A
VCE=5V,IC=0.5A
VCB=10V,IE=0,f=1MHz
60
320
1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
V
1.5
8
MHz
pF
Collector output capacitance
Cob
90
CLASSIFICATION OF hFE(1)
Rank
D
E
F
60-120
100-200
160-320
Range
Typical Characteristics
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