2SD1761E [ISC]
暂无描述;
| 型号： | 2SD1761E |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
DESCRIPTION
·
·With TO-220Fa package
·Low collector saturation voltage
·Complement to type 2SB1187
·Wide safe operating area
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
UNIT
80
V
V
V
A
A
Open base
60
Open collector
5
Collector current (DC)
Collector current-Peak
3
ICM
6
30
TC=25℃
Ta=25℃
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
60
80
5
TYP.
MAX
UNIT
V
IC=1mA , IB=0
IC=50μA , IE=0
IE=50μA , IC=0
IC=2A IB=0.2A
V
V
1.0
1.5
10
V
IC=2A IB=0.2A
V
VCB=60V IE=0
μA
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
10
hFE
DC current gain
IC=0.5A ; VCE=5V
IC=0.5A ; VCE=5V
IE=0 ; VCB=10V ,f=1MHz
60
320
fT
Transition frequency
8
MHz
pF
Cob
Output capacitance
90
hFE Classifications
D
E
F
60-120
100-200 160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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