2SC1959GR(TO-92) [JCST]
Transistor;
| 型号： | 2SC1959GR(TO-92) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：1391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
2SC1959
TRANSISTOR (NPN)
FEATURES
z
Excellent hFE Linearlity
1.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. COLLECTOR
3. BSAE
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
35
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
5
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
0.5
A
PC
500
150
-55-150
mW
TJ
℃
℃
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 100µA, IE=0
Min
35
30
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 1mA , IB=0
V
IE= 100µA, IC=0
V
VCB= 35V, IE=0
0.1
0.1
µA
µA
Emitter cut-off current
IEBO
VEB= 5 V, IC=0
hFE(1)
VCE=1 V, IC= 100mA
VCE=6 V, IC= 400mA
IC= 100mA, IB= 10mA
VCE= 1V, IC= 100mA
VCE= 12V, IC=2mA
VCB=6V,IE=0,f=1MHz
70
25
400
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
0.25
1.0
V
V
Transition frequency
f T
300
7
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
O
Y
GR
hFE(1)
hFE(2)
70-140
25(min)
120-240
40(min)
200-400
Range
A,May,2011
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