2SA608NG [JCST]
Transistor;
| 型号： | 2SA608NG |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总1页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92SPlastic-Encapsulate Transistors
TO-92S
2SA608S TRANSISTOR (PNP)
FEATURES
1. EMITTER
Power dissipation
2. COLLECTOR
3. BASE
PCM
Collector current
ICM
:
300 mW (Tamb=25℃)
:
-100 mA
123
Collector-base voltage
(BR)CBO : -40
V
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
UNIT
V
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
MIN
-40
-30
-5
TYP
MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
V
V
IE=-100µA, IC=0
VCB=-25V, IE=0
-1
-1
µA
µA
IEBO
VEB=-4V, IC=0
Emitter cut-off current
hFE
VCE=-6V, IC=-1mA
IC=-50mA, IB=-5mA
VCE=-6V, IC=-10mA
VCB=-6V, f=1MHz
60
560
-0.5
DC current gain
VCE(sat)
fT
V
Collector-emitter saturation voltage
Transition frequency
180
7
MHz
pF
Cob
Collector output capacitance
CLASSIFICATION OF hFE
Rank
D
E
F
G
Range
60-120
100-200
160-320
280-560
相关型号：
2SA608NG-NPA-AT
Bipolar Transistor, (-)50V, (-)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA, TO-92 / NPA-WA, 1500-REEL
ONSEMI
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