2SA608NG(NPA) [ONSEMI]
Small Signal Bipolar Transistor, 0.15A I(C), PNP;
| 型号： | 2SA608NG(NPA) |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), PNP |
| 文件： | 总4页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN6324A
PNP / NPN Epitaxial Planar Silicon Transistors
2SA608N / 2SC536N
Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
unit : mm
2205
•
Capable of being used in the low frequency to high
frequency range.
[2SA608N / 2SC536N]
4.5
3.7
Features
3.5
•
Large current capacity and wide ASO.
0.5
0.45
0.44
1
2
3
1.271.27
1 : Emitter
2 : Collector
3 : Base
SANYO : NPA
unit : mm
2164
[2SA608N / 2SC536N]
4.5
3.7
3.5
0.45
1.27
0.5
0.45
0.44
1
2
3
2.5
2.5
1 : Emitter
2 : Collector
3 : Base
SANYO : NPA-WA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42503 TS IM TA-100055, 100056 / 10700 TS (KOTO) TA-2543 No.6324-1/4
2SA608N / 2SC536N
Specifications
( ) : 2SA608N
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
(--50)60
(--)50
(--)6
V
V
I
C
(--)150
(--)400
500
mA
mA
mW
°C
°C
Collector Current (Pulse)
Collector Dissipation
I
CP
P
C
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
I
V
V
V
V
V
V
=(--)40V, I =0
(--)0.1
(--)0.1
560*
µA
µA
CBO
CB
EB
CE
CE
CE
CB
E
Emitter Cutoff Current
I
=(--)5V, I =0
C
EBO
h
1
2
=(--)6V, I =(--)1mA
160*
FE
FE
C
DC Current Gain
h
=(--)6V, I =(--)0.1mA
70
C
Gain-Bandwidth Product
f
=(--)6V, I =(--)10mA
C
200
(4.5)3.0
MHz
pF
V
T
Output Capacitance
Cob
=(--)6V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V
V
(sat)
I
C
I
C
I
C
I
C
=(--)100mA, I =(--)10mA
(--)0.3
(--)1.0
CE
B
(sat)
=(--)100mA, I =(--)10mA
V
BE
B
V
V
V
=(--)10µA, I =0
(--)60
(--)50
(--)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(--)1mA, R =∞
BE
V
I =(--)10µA, I =0
V
E
C
*The 2SA608N / 2SC536N are classified by 1mA h as follow.
FE
Rank
F
G
h
FE
160 to 320 280 to 560
I
-- V
I
-- V
C CE
C
CE
--16
--12
20
16
2SA608N
2SC536N
12
--8
--4
0
8
4
0
I =0
B
I =0
B
0
--10
--20
--30
--40
--50
0
10
20
30
40
50
Collector-to-Emitter Voltage, V
-- V IT00496
Collector-to-Emitter Voltage, V
-- V IT00497
CE
CE
I
-- V
I
-- V
BE
C
BE
C
--240
--200
--160
--120
--80
240
200
160
120
80
2SC536N
2SA608N
V
=6V
V
= --6V
CE
CE
--40
0
40
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT00498
0
0.2
0.4
0.6
0.8
1.0
1.2
IT00499
Base-to-Emitter Voltage, V
-- V
Base-to-Emitter Voltage, V
-- V
BE
BE
No.6324-2/4
2SA608N / 2SC536N
h
FE
-- I
h
FE
-- I
C
C
1000
1000
2SC536N
2SA608N
7
7
V
=6V
V
= --6V
CE
CE
5
5
3
2
3
2
Ta=75°C
--25°C
Ta=75°C
--25°C
25°C
100
100
25°C
7
5
7
5
3
2
3
2
10
--0.1
10
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--1.0
--10
--100
--1000
IT00500
1.0
10
100
1000
IT00501
Collector Current, I -- mA
Collector Current, I -- mA
C
C
f
-- I
C
f
-- I
T
T
C
1000
1000
2SA608N
= --6V
2SC536N
7
5
7
V
V
CE
=6V
CE
5
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
--1.0
10
1.0
2
3
5
7
2
3
5
7
2
3
5 7
2
2
2
3
5
7
2
3
5
7
2
3
5 7
10
100
1000
IT00503
--10
--100
--1000
IT00502
Collector Current, I -- mA
Collector Current, I -- mA
C
C
Cob -- V
Cob -- V
CB
CB
100
100
2SA608N
f=1MHz
2SC536N
f=1MHz
7
5
7
5
3
2
3
2
10
7
5
10
7
5
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
--0.1
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5
7
--100
3
5
7
2
3
5
7
2
3
5 7
100
1.0
10
--1.0
--10
Collector-to-Base Voltage, V
-- V IT00504
Collector-to-Base Voltage, V
-- V IT00505
CB
C
CB
V
(sat) -- I
V
(sat) -- I
CE C
CE
1.0
--1.0
2SC536N
2SA608N
I
7
7
5
I
/ I =10
B
/ I = --10
B
C
C
5
3
2
3
2
--0.1
0.1
7
5
7
5
3
2
3
2
0.01
1.0
--0.01
--1.0
2
3
5
7
2
3
5
7
2
3
5
7
3
5
7
2
3
5
7
2
3
5 7
1000
IT00507
--10
--100
--1000
IT00506
10
100
Collector Current, I -- mA
Collector Current, I -- mA
C
C
No.6324-3/4
2SA608N / 2SC536N
A S O
P
-- Ta
C
600
1000
2SA608N / 2SC536N
2SA608N / 2SC536N
7
For PNP, minus sign is omitted.
I =400mA
CP
5
500
400
3
2
I =150mA
C
100
7
5
300
3
2
200
100
0
10
7
5
3
2
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
1.0
10
100
IT00511
Collector-to-Emitter Voltage, V
CE
-- V
Ambient Temperature, Ta -- °C
IT00510
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2003. Specifications and information herein are subject
to change without notice.
PS No.6324-4/4
相关型号：
2SA608NG-NPA-AT
Bipolar Transistor, (-)50V, (-)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA, TO-92 / NPA-WA, 1500-REEL
ONSEMI
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