VUO120-16NO2T [IXYS]
Bridge Rectifier Diode, 3 Phase, 188A, 1600V V(RRM), Silicon,;
| 型号： | VUO120-16NO2T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Bridge Rectifier Diode, 3 Phase, 188A, 1600V V(RRM), Silicon, 局域网 二极管 |
| 文件： | 总5页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUO120-16NO2T
3~
Rectifier
Standard Rectifier Module
VRRM
IDAV
IFSM
V
= 1600
180 A
=
=
1100 A
3~ Rectifier Bridge + NTC
Part number
VUO120-16NO2T
Backside: isolated
M1/O1
W5 W6
NTC
~A6
~E6
~K6
M10/O10
V2-Pack
Features / Advantages:
Applications:
Package:
● Package with DCB ceramic
● Reduced weight
● Diode for main rectification
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
V~
3600
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● Field supply for DC motors
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130604b
© 2013 IXYS all rights reserved
VUO120-16NO2T
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
1700
1600
100
2
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR = 1600 V
VR = 1600 V
µA
mA
V
forward voltage drop
VF
60
1.16
1.55
1.09
1.59
180
IF =
A
V
IF = 180 A
IF = 60 A
IF = 180 A
TC = 90°C
rectangular
TVJ
=
°C
V
125
V
bridge output current
TVJ = 150°C
TVJ = 150°C
A
IDAV
d = ⅓
VF0
0.81
V
threshold voltage
slope resistance
for power loss calculation only
rF
4.4 mΩ
0.6 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.2
TC = 25°C
TVJ = 45°C
VR = 0 V
205
1.10
1.19
935
W
kA
kA
A
total power dissipation
max. forward surge current
IFSM
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
TVJ = 150°C
VR = 0 V
1.01
kA
value for fusing
I²t
TVJ = 45°C
VR = 0 V
6.05 kA²s
5.89 kA²s
4.37 kA²s
4.25 kA²s
pF
TVJ = 150°C
VR = 0 V
CJ
TVJ = 25°C
37
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130604b
© 2013 IXYS all rights reserved
VUO120-16NO2T
Ratings
Package V2-Pack
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max.
100
Unit
A
°C
°C
g
RMS current
Tstg
-40
-40
125
150
storage temperature
virtual junction temperature
TVJ
Weight
MD
76
2
2.5 Nm
mounting torque
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
6.0
12.0
mm
mm
V
creepage distance on surface | striking distance through air
t = 1 second
V
3600
3000
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
XXXXXXXXXXXXX
yywwx
Logo
UL
Part name
Date code Prod. line
Ordering
Standard
Part Number
Marking on Product
Delivery Mode
Box
Quantity Code No.
VUO120-16NO2T
VUO120-16NO2T
6
510996
Similar Part
Package
Voltage class
1200
VUO120-12NO2T
V2-Pack
105
104
Temperature Sensor NTC
Symbol Definition
Conditions
TVJ = 25°
min. typ. max. Unit
resistance
R25
4.75
5
5.25
kΩ
R
temperature coefficient
3375
B25/50
K
[
]
103
TVJ = 150°C
* on die level
Equivalent Circuits for Simulation
Rectifier
V0
102
I
R0
0
25
50
75
100 125 150
TC [°C]
threshold voltage
slope resistance *
V0 max
R0 max
0.81
3.2
V
Typ. NTC resistance vs. temperature
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130604b
© 2013 IXYS all rights reserved
VUO120-16NO2T
Outlines V2-Pack
Detail Y
M 5:1
Detail X
M 2:1
Ø1.5 (DIN 46 431)
Ø 6.1
Ø 2.5
ꢀ
0.5±0.2
Ø 2.1
65
93
38
40.4
78.5±0.3
28.8±0.3
16.4±0.3 7.4 ±0.3
4±0.3
28.8±0.3
4x45°
3.4
±0.3
R1
1
2
3
1
2
3
4
5
6
7
4
5
6
7
8
9
10
8
9
10
40±0.15
80±0.3
0.5
Aufdruck derTypenbezeichnung
M1/O1
W5 W6
NTC
~A6
~E6
~K6
M10/O10
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130604b
© 2013 IXYS all rights reserved
VUO120-16NO2T
Rectifier
104
50 Hz
200
900
800
700
600
500
400
50Hz, 80% VRRM
0.8 x V RRM
160
120
TVJ = 45°C
IFSM
[A]
TVJ= 45°C
IF
[A2s]
80
TVJ= 150°C
[A]
TVJ = 150°C
T
VJ = 150°C
40
TVJ = 125°C
TVJ
=
25°C
1.5
103
0
0.5
1.0
1
2
3
4 5 6 7 8 9
0.001
0.01
0.1
1
t [ms]
t [s]
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I2t vs. time per diode
100
80
RthA
:
160
120
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
DC =
1
0.5
0.4
P
tot 60
0.33
0.17
0.08
0.4
IFAVM
0.33
0.17
0.08
[W]
80
40
0
40
20
0
[A]
0
20
40
60
80
0
25 50 75 100 125 150 175
0
25 50 75 100 125 150
IF(AV)M [A]
Tamb [°C]
TC [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
0.6
ZthJC
0.4
[K/W]
Ri
ti
0.060 0.020
0.003 0.010
0.150 0.225
0.243 0.800
0.144 0.580
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130604b
© 2013 IXYS all rights reserved
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