VUO122-08NO7 [IXYS]
RECT BRIDGE 3PH 800V ECO-PAC2;
| 型号： | VUO122-08NO7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | RECT BRIDGE 3PH 800V ECO-PAC2 |
| 文件： | 总5页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUO122-08NO7
3~
Rectifier
Standard Rectifier Module
VRRM
IDAV
IFSM
V
A
A
=
=
=
800
125
1000
3~ Rectifier Bridge
Part number
VUO122-08NO7
PS18
D1 D3 D5
A1
L9
K10
D2 D4 D6
EG1
ECO-PAC2
Package:
Features / Advantages:
Applications:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
V~
3000
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
www.littelfuse.com/disclaimer-electronics.
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220b
© 2019 IXYS all rights reserved
VUO122-08NO7
Ratings
Rectifier
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
900
800
100
2
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR = 800 V
µA
mA
V
VR = 800 V
IF = 50 A
IF = 150 A
IF = 50 A
IF = 150 A
TC = 115°C
rectangular
forward voltage drop
1.13
1.47
1.05
1.49
125
VF
V
TVJ
=
°C
V
125
V
bridge output current
TVJ = 150°C
TVJ = 150°C
A
IDAV
d = ⅓
0.80
V
VF0
threshold voltage
slope resistance
for power loss calculation only
4.6 mΩ
0.6 K/W
K/W
rF
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.3
TC = 25°C
TVJ = 45°C
VR = 0 V
205
1.00
1.08
850
W
kA
kA
A
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
IFSM
TVJ = 150°C
VR = 0 V
920
A
value for fusing
TVJ = 45°C
VR = 0 V
I²t
5.00 kA²s
4.85 kA²s
3.62 kA²s
3.52 kA²s
pF
TVJ = 150°C
VR = 0 V
TVJ = 25°C
35
CJ
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220b
© 2019 IXYS all rights reserved
VUO122-08NO7
Ratings
Package ECO-PAC2
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
100
150
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
24
Weight
MD
1.4
2
Nm
mounting torque
terminal to terminal
terminal to backside
6.0
10.0
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
t = 1 second
3000
2500
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Logo
Lot#
Circuit Diagram
yywwZ 123456
XXX XX-XXXXX
Date Code/Location Part Number
Ordering
Standard
Ordering Number
Marking on Product
VUO122-08NO7
Delivery Mode
Quantity Code No.
25 494429
VUO122-08NO7
Box
TVJ =150°C
Equivalent Circuits for Simulation
* on die level
Rectifier
V0
I
R0
threshold voltage
slope resistance *
0.8
3.4
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220b
© 2019 IXYS all rights reserved
VUO122-08NO7
Outlines ECO-PAC2
0.2
1.55
0.2
2x M4
10.95
0.2
0.2
1.55
1.55
0.2
3.3
0.2
0.2
5.7
9.4
A C E
G
I
K
1
2
3
10
11
12
B
D
O
F
H
T
J
4
5
6
13
14
15
M
R
W
2
.
0
7
8
9
16
17
18
3
.
°
4
5
4
Ø
L N P
S
V
X
1.5
8.3
43
0.2
51
PS18
D1 D3 D5
A1
L9
K10
D2 D4 D6
EG1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220b
© 2019 IXYS all rights reserved
VUO122-08NO7
Rectifier
800
700
200
6000
5000
50 Hz
0.8 x V RRM
VR = 0 V
160
I2t
IF 120
4000
[A2s]
IFSM
TVJ = 45°C
TVJ = 45°C
600
500
400
[A]
[A]
80
3000
2000
1000
TVJ = 150°C
TVJ
=
TVJ = 150°C
40 125°C
150°C
TVJ = 25°C
0
0.4
10-3
10-2
10-1
100
0.8
1.2
1.6
2.0
1
10
t [ms]
VF [V]
t [s]
Fig. 3 I2t vs. time per diode
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
60
50
40
30
20
10
0
DC =
1
160
120
RthJA
:
DC =
1
0.6 KW
0.8 KW
0.5
0.5
0.4
0.4
1
2
4
8
KW
KW
KW
KW
0.33
0.17
0.08
0.33
0.17
0.08
Ptot
[W]
IF(AV)M
80
40
0
[A]
0
10
20
30
40
50 0
25
50
75
TA [°C]
100
125
150
0
25 50 75 100 125 150
IdAVM [A]
TC [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
0.7
0.6
0.5
Constants for ZthJC calculation:
ZthJC
0.4
[K/W]
0.3
i
Rth (K/W)
ti (s)
1
2
3
4
0.08
0.04
0.29
0.19
0.012
0.007
0.036
0.102
0.2
0.1
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220b
© 2019 IXYS all rights reserved
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