VUE35-06NO7 [IXYS]
Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED); 三相整流桥与快速恢复外延二极管（ FRED ）
| 型号： | VUE35-06NO7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) |
| 文件： | 总2页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUE 35-06NO7
ECO-PAC TM
Three Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
IdAV = 56 A
VRRM = 600 V
trr
= 35 ns
D
VRSM
V
VRRM
V
Typ
A
H
N
600
600
VUE 35-06NO7
K
Symbol
Conditions
Maximum Ratings
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
IdAV
IdAVM
①
TC = 85°C, module
56
90
A
A
IFSM
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
110
120
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
95
105
A
A
Applications
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
60
60
A2s
A2s
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
45
45
A2s
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
VISOL
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA t = 1 s
3000
3600
V~
V~
• Small and light weight
• Low noise switching
Md
Weight
Mounting torque (M4)
typ.
1.5-2/14-18 Nm/lb.in.
19
g
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
Conditions
Characteristic Values
typ.
max.
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
0.1 mA
0.5 mA
VF
IF = 15 A
TVJ = 25°C
2.01
V
VT0
rT
for power-loss calculations only
1.13
13 mW
V
RthJC
RthCH
per diode; DC current
per diode, DC current, typ.
1.6 K/W
0.3 K/W
IRM
trr
IF = 25 A, -diF/dt = 100 A/µs
VR = 100 V, L = 0.05 mH, TVJ = 100°C
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V, TVJ = 25°C
4
4.9
A
35
tbd ns
a
dS
dA
Max. allowable acceleration
creeping distance on surface
creepage distance in air
50
11.2
9.7
m/s2
mm
mm
Data according to IEC 60747 refer to a single diode unless otherwise stated
① for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
VUE 35-06NO7
40
A
2000
nC
40
TVJ=100°C
VR = 300V
TVJ=100°C
VR = 300V
A
30
1500
1000
500
0
30
IF
IRM
Qr
TVJ=150°C
TVJ=100°C
TVJ= 25°C
IF= 30A
IF= 15A
IF=7.5A
20
10
0
20
10
0
IF= 30A
IF= 15A
IF=7.5A
A/ s
-diF/dt
0
1
2
V
100
1000
0
200 400 600 1000
A/ s
-diF/dt
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
2.0
120
20
1.6
µs
TVJ=100°C
IF = 15A
TVJ=100°C
VR = 300V
VFR
ns
V
VFR
tfr
110
trr
1.5
Kf
15
10
5
1.2
IF= 30A
IF= 15A
IF=7.5A
100
tfr
1.0
0.8
0.4
0.
IRM
90
Qr
0.5
80
70
0.0
0
A/ s
0
40
80
120
160
0
200 400 600 81000
0
200 400 600 1000
°C
A/ s
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
1
2
3
4
0.5464
0.2104
0.0432
0.8
0.0052
0.0003
0.0004
0.0092
ZthJC
0.1
0.01
VBE26-06NO7/VUE35-06NO7
0.001
s
0.0001
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
2 - 2
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