VUE50 [IXYS]
Three Phase Rectifier Bridge; 三相整流桥
| 型号： | VUE50 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Three Phase Rectifier Bridge |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUE 50
VRRM = 1200 V
IdAV = 50 A
Three Phase
Rectifier Bridge
trr
= 40 ns
5
4
1/2
4/5
VRSM
V
VRRM
V
Type
2
1
10
8
6
1200
1200
VUE 50-12NO1
10
8
6
Symbol
IdAV
Test Conditions
Maximum Ratings
Features
●
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Leads suitable for PC board soldering
Creeping and creepage-distance
fulfils UL 508/CSA 22.2NO14 and
VDE 0160 requirements
TK = 85°C, module
50
A
●
●
●
●
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
210
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
185
195
A
A
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
180
A2s
A2s
●
●
Epoxy meet UL94V-O
UL registered E72873
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
170
160
A2s
A2s
Applications
●
Supplies for DC power equipment
Input rectifiers for PWM inverter
Output filter for PWM inverter
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
●
●
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
3000
3600
V~
V~
Advantages
IISOL £ 1 mA
●
Reduced EMI/RFI
Easy to mount with two screws
Space and weight savings
●
Md
Mounting torque
(M5)
(10-32UNF)
2 - 2.5
18-22
Nm
lb.in.
●
●
Weight
typ.
35
g
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Symbol
IR
Test Conditions
Characteristic Values
typ.
max
VR = VRRM
VR = 0.8 VRRM
TVJ = 25°C
TVJ = 125°C
0.75
7
mA
mA
4
VF
IF = 30 A;
TVJ = 25°C
2.55
V
VT0
rT
For power-loss calculations only
1.65
18.2
V
mW
RthJS
per diode,
per module,
120° rect.
120° rect.
1.5
0.25
K/W
K/W
IRM
trr
IF = 30 A, -diF/dt = 240 A/ms
VR = 540 V, L £ 0.05 mH, TVJ = 100°C
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C
16
40
18
60
A
ns
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Use output terminals in parallel connections
© 2000 IXYS All rights reserved
1 - 2
VUE 50
70
A
60
A
50
A
TVJ=100°C
VR= 540V
60
50
40
max.
IF=30A
IF=60A
IF=30A
IF=15A
50
40
30
20
10
0
40
IRM
IF
IdAVM
TVJ= 25°C
TVJ=150°C
30
20
10
0
30
20
10
0
typ.
V
°C
75 100 150
A/ s
600
0
1
2
3
4
0
25
50
TS
0
200
-diF/dt
400
VF
Fig. 1 Forward current
versus voltage drop per diode.
Fig. 2 Maximum forward current at
heatsink temperature TS.
Fig. 3 Typical peak reverse current
versus -diF/dt.
1.4
1.2
1.0
1.2
100
V
3000
TVJ=100°C
ns
µs
VR=540 V
1.0
80
2400
VFR
IF=30A
0.8
0.6
0.4
0.2
0.0
VFR
trr
max.
IRM
IF=60A
IF=30A
IF=15A
K
f 0.8
60
40
20
0
1800
1200
600
0
tfr
0.6
trr
tfr
0.4
TVJ=125°C
IF=30A
0.2
0.0
typ.
A/ s
°C
A/ s
600
0
40
80
120
160
0
200
-diF/dt
400
600
0
200
-
400
TVJ
diF/dt
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Typical recovery time
versus -diF/dt.
Fig. 6 Typical peak forward voltage and
forward recovery time versus -diF/dt.
2.0
300
W
RthSA (K/W)
0.2
K/W
0.5
250
1.0
1.5
2.0
1.5
200
ZthJS
1.0
4.0
6.0
RthJSi ti
150
0.05 0.04
0.2
0.75 0.13
0.5
0.2
0.07
100
50
0
0.5
0.0
0.001
s
°C
10 20 30 40 50 A 0 25 50 75 100 150
0.01
0.1
1
10
0
IdAVM
t
TA
Fig. 7 Transient thermal impedance junction to heatsink
Fig. 8 Power dissipation versus direct output current
and ambient temperature
© 2000 IXYS All rights reserved
2 - 2
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