MMO140-08IO7 [IXYS]

Silicon Controlled Rectifier, 90A I(T)RMS, 58000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MODULE-4;
MMO140-08IO7
型号: MMO140-08IO7
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Silicon Controlled Rectifier, 90A I(T)RMS, 58000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MODULE-4

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MMO 140  
MLO 140  
IRMS = 140 A  
VRRM = 800-1600 V  
AC Controller Modules  
Preliminary Data  
A
W1C  
VRSM  
VDSM  
VRRM  
VDRM  
Type  
I / H  
G / F  
V
V
800  
1200 1200  
1600 1600  
800  
MMO 140-08io7  
MMO 140-12io7  
MMO 140-16io7  
MLO 140-08io7  
MLO 140-12io7  
MLO 140-16io7  
N
N
W1H  
G / F  
I / H  
Symbol  
Conditions  
Maximum Ratings  
Features  
IRMS  
ITRMS  
ITAVM  
TC = 85°C, 50 - 400 Hz, (per single controller)  
TC = 85°C; 180° sine, per Thyristor  
130  
90  
58  
A
A
A
• Thyristor controller for AC (circuit  
W1C acc. to IEC) for mains frequency  
• Isolation voltage 3000 V~  
• Planar glass passivated chips  
• Low forward voltage drop  
ITSM  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1150  
1230  
A
A
• Lead suitable for PC board solering  
TVJ = 125°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
1000  
1070  
A
A
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
6600  
6280  
A2s  
A2s  
Applications  
• Switching and control of single and  
three phase AC circuits  
• Light and temperature control  
• Softstart AC motor controller  
• Solid state switches  
TVJ = 125°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
5000  
4750  
A2s  
A2s  
(di/dt)cr  
TVJ = 125°C  
f = 50 Hz, tP = 200 µs  
repetitive, IT = 60 A  
150  
A/µs  
VD = 2/3 VDRM  
IG = 0.45 A  
diG/dt = 0.45 A/µs  
non repetitive, IT = ITAVM  
500  
A/µs  
V/µs  
Advantages  
• Easy to mount with two screws  
• Space and weight savings  
• Improved temperature and power  
cycling  
(dv/dt)cr  
PGM  
TVJ = 125°C; VDR = 2/3 VDRM  
RGK = ¥; method 1 (linear voltage rise)  
1000  
TVJ = 125°C  
IT = ITAVM  
tp = 30 µs  
tp = 300 µs  
10  
5
W
W
• High power density  
• Small and light weight  
PGAVM  
VRGM  
0.5  
10  
W
V
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Md  
Mounting torque (M4)  
typ.  
1.5...2.0/14...18 Nm/lb.in.  
18  
Weight  
g
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  
MMO 140  
MLO 140  
Symbol  
ID , IR  
VT  
Conditions  
Characteristic Values  
10  
V
1: IGT, TVJ = 125 C  
2: IGT, TVJ 25 C  
TVJ = 125°C; VR = VRRM; VD = VDRM  
IT = 200 A; TVJ = 25°C  
For power-loss calculations only  
£
£
5
mA  
V
=
3: IGT, TVJ = -40 C  
1.75  
VG  
VT0  
rT  
0.85  
5.2  
V
mW  
VGT  
VD = 6 V  
VD = 6 V  
TVJ = 25°C  
TVJ = -40°C  
£
£
1.5  
1.6  
V
V
3
2
6
5
1
1
IGT  
TVJ = 25°C  
TVJ = -40°C  
£
£
100  
200  
mA  
mA  
4
VGD  
IGD  
TVJ = 125°C; VD = 2/3 VDRM  
£
£
0.2  
10  
V
mA  
4: PGAV = 0.5 W  
IL  
TVJ = 25°C; tP = 10 µs  
IG = 0.45 A; diG/dt = 0.45 A/µs  
£
450  
mA  
5: PGM  
=
5 W  
IGD, TVJ = 125 C  
6: PGM = 10 W  
0.1  
100  
101  
102  
103  
IG  
104  
IH  
TVJ = 25°C; VD = 6 V; RGK = ¥  
£
£
200  
2
mA  
µs  
mA  
tgd  
TVJ = 25°C; VD = ½ VDRM  
IG = 0.45 A; diG/dt = 0.45 A/µs  
Fig. 1 Gate trigger characteristics  
RthJC  
RthCH  
per thyristor; DC  
per module  
0.7  
0.35  
K/W  
K/W  
1000  
TVJ = 25 C  
per thyristor; sine 180° el  
per module  
typ.  
typ.  
0.12  
0.06  
K/W  
K/W  
µs  
tgd  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
11.2  
17.0  
50  
mm  
mm  
typ.  
Limit  
100  
m/s2  
10  
Dimensions in mm (1 mm = 0.0394")  
1
10  
mA  
100  
1000  
IG  
Fig. 2 Gate trigger delay time  
© 2000 IXYS All rights reserved  
2 - 2  

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