MMO140-08IO7 [IXYS]
Silicon Controlled Rectifier, 90A I(T)RMS, 58000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MODULE-4;
| 型号： | MMO140-08IO7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 90A I(T)RMS, 58000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, MODULE-4 局域网 栅 栅极 |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMO 140
MLO 140
IRMS = 140 A
VRRM = 800-1600 V
AC Controller Modules
Preliminary Data
A
W1C
VRSM
VDSM
VRRM
VDRM
Type
I / H
G / F
V
V
800
1200 1200
1600 1600
800
MMO 140-08io7
MMO 140-12io7
MMO 140-16io7
MLO 140-08io7
MLO 140-12io7
MLO 140-16io7
N
N
W1H
G / F
I / H
Symbol
Conditions
Maximum Ratings
Features
IRMS
ITRMS
ITAVM
TC = 85°C, 50 - 400 Hz, (per single controller)
TC = 85°C; 180° sine, per Thyristor
130
90
58
A
A
A
• Thyristor controller for AC (circuit
W1C acc. to IEC) for mains frequency
• Isolation voltage 3000 V~
• Planar glass passivated chips
• Low forward voltage drop
ITSM
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1150
1230
A
A
• Lead suitable for PC board solering
TVJ = 125°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
1070
A
A
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
6600
6280
A2s
A2s
Applications
• Switching and control of single and
three phase AC circuits
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
TVJ = 125°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5000
4750
A2s
A2s
(di/dt)cr
TVJ = 125°C
f = 50 Hz, tP = 200 µs
repetitive, IT = 60 A
150
A/µs
VD = 2/3 VDRM
IG = 0.45 A
diG/dt = 0.45 A/µs
non repetitive, IT = ITAVM
500
A/µs
V/µs
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
(dv/dt)cr
PGM
TVJ = 125°C; VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
1000
TVJ = 125°C
IT = ITAVM
tp = 30 µs
tp = 300 µs
10
5
W
W
• High power density
• Small and light weight
PGAVM
VRGM
0.5
10
W
V
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mounting torque (M4)
typ.
1.5...2.0/14...18 Nm/lb.in.
18
Weight
g
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
MMO 140
MLO 140
Symbol
ID , IR
VT
Conditions
Characteristic Values
10
V
1: IGT, TVJ = 125 C
2: IGT, TVJ 25 C
TVJ = 125°C; VR = VRRM; VD = VDRM
IT = 200 A; TVJ = 25°C
For power-loss calculations only
£
£
5
mA
V
=
3: IGT, TVJ = -40 C
1.75
VG
VT0
rT
0.85
5.2
V
mW
VGT
VD = 6 V
VD = 6 V
TVJ = 25°C
TVJ = -40°C
£
£
1.5
1.6
V
V
3
2
6
5
1
1
IGT
TVJ = 25°C
TVJ = -40°C
£
£
100
200
mA
mA
4
VGD
IGD
TVJ = 125°C; VD = 2/3 VDRM
£
£
0.2
10
V
mA
4: PGAV = 0.5 W
IL
TVJ = 25°C; tP = 10 µs
IG = 0.45 A; diG/dt = 0.45 A/µs
£
450
mA
5: PGM
=
5 W
IGD, TVJ = 125 C
6: PGM = 10 W
0.1
100
101
102
103
IG
104
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
£
£
200
2
mA
µs
mA
tgd
TVJ = 25°C; VD = ½ VDRM
IG = 0.45 A; diG/dt = 0.45 A/µs
Fig. 1 Gate trigger characteristics
RthJC
RthCH
per thyristor; DC
per module
0.7
0.35
K/W
K/W
1000
TVJ = 25 C
per thyristor; sine 180° el
per module
typ.
typ.
0.12
0.06
K/W
K/W
µs
tgd
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
11.2
17.0
50
mm
mm
typ.
Limit
100
m/s2
10
Dimensions in mm (1 mm = 0.0394")
1
10
mA
100
1000
IG
Fig. 2 Gate trigger delay time
© 2000 IXYS All rights reserved
2 - 2
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