MMO175-16IO7 [LITTELFUSE]
Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE-8;
| 型号： | MMO175-16IO7 |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 125A I(T)RMS, 80000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element, MODULE-8 局域网 栅 栅极 |
| 文件： | 总2页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMO 175
IRMS
ITAVM
=
=
175 A
80 A
AC Controller Modules
Preliminary Data
VRRM = 1200/1600 V
A
VRSM
VRRM
VDSM
V
VDRM
V
Typ
I / H
G / F
1300
1700
1200
1600
MMO 175-12io7
MMO 175-16io7
N
Features
Symbol
Conditions
Maximum Ratings
• Thyristor controller for AC
(circuit W1C acc. to IEC) for mains
frequency
IRMS
ITRMS
ITAVM
TC = 85°C; 50-400 Hz (per single controller)
175
125
80
A
A
A
TC = 85°C; 180° sine
• Isolation voltage 3000 V~
• Planar glass passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
ITSM
TVJ = 45°C; t = 10 ms (50 Hz)
1500
1600
A
A
VR = 0
TVJ = 125°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
TVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
TVJ = 125°C; t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
1350
1450
A
A
Applications
I2t
11 200
10 750
A2s
A2s
• Switching and control of single and
three phase AC circuits
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
9 100
8 830
A2s
A2s
VR = 0
t = 8.3 ms (60 Hz)
(di/dt)cr
TVJ = 125°C;
f = 50 Hz; tp = 200 µs;
repetitive, IT = 80 A
150 A/µs
VD = 2/3 VDRM
IG = 0.45 A;
diG /dt = 0.45 A/µs
TVJ = 125°C; VD = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
;
Advantages
non repetitive, IT = ITAVM
500 A/µs
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
• High power density
• Small and light weight
(dv/dt)cr
PGM
;
1000 V/µs
TVJ = 125°C;
IT = IT(AV)M
tp = 30 ms
tp = 300 ms
10
5
0.5
W
W
W
;
PGAVM
VRGM
10
V
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS
IISOL < 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mounting torque (M4)
1.5 - 2.0 Nm
14 - 18 lb.in.
Weight
Typical including screws
18
g
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2017 IXYS All rights reserved
20170321b
1 - 2
MMO 175
Symbol
Conditions
Characteristic Values
10
V
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
typ.
max.
5
ID, IR
VT
VR / VD = VRRM / VDRM
IT = 200 A
TVJ = 125°C
TVJ = 25°C
mA
V
VG
1.57
VT0
rt
For power-loss calculations only
0.85
3.70
V
mΩ
3
VGT
VD = 6 V
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.5
1.6
100
200
V
V
mA
mA
2
6
1
5
1
IGT
4
VGD
IGD
VD = 2/3 VDRM
;
TVJ = 125°C
0.2
10
V
mA
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
IL
tp = 10 µs;
IG = 0.45 A; diG /dt = 0.45 A/µs
TVJ = 25°C
450
mA
IGD, TVJ = 125°C
IH
VD = 6 V; RGK = ∞;
TVJ = 25°C
TVJ = 25°C
200
2
mA
µs
0.1
100
101
102
103
IG
104
mA
tgd
VD = ½VDRM
IG = 0.45 A; diG /dt = 0.45 A/µs
Fig. 1 Gate trigger characteristics
RthJC
RthCH
0.50 K/W
K/W
per thyristor; DC current
per module
0.12
0.06
1000
RthJC
RthCH
0.25 K/W
K/W
TVJ = 25°C
µs
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
11.2
5.0
mm
mm
tgd
50 m/s2
typ.
Limit
100
Dimensions in mm (1 mm = 0.0394")
10
1
10
mA
100
1000
IG
Fig. 2 Gate trigger delay time
IXYS reserves the right to change limits, test conditions and dimensions.
© 2017 IXYS All rights reserved
20170321b
2 - 2
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