MMA-212734-R5 [IXYS]
Wide Band Medium Power Amplifier,;
| 型号： | MMA-212734-R5 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Wide Band Medium Power Amplifier, 射频 微波 |
| 文件： | 总11页 (文件大小：1205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Features:
Frequency Range: 21 – 27 GHz
P1dB: 34 dBm
IM3 Level -45dBc @Po=20dBm/tone
Gain: 25 dB
Vdd =6 V
Ids = 1500 to 2800 mA
Input and Output Fully Matched to 50 Ω
Integrated RF power detector
Applications:
Communication systems
Microwave instrumentations
Point to Point Radios
Functional Block Diagram
Description:
The MMA-212734 is a GaAs MMIC linear power amplifier with 3-Watt output power and high gain of 25dB over full
21 to 27GHz frequency range. This amplifier was optimally designed for high linearity applications at 12dB back-off
from P-1 condition.
Absolute Maximum Ratings: (Ta= 25 C)*
Min.
SYMBOL PARAMETERS
UNITS
V
Max.
6.5
Vds
Vg
Ig
Drain-Source Voltage
-2.1
-17
Gate-Source Voltage
First Gate Current
Power Dissipation
V
0
mA
W
17
Pd
16.8
Pin max RF Input Power
dBm
ºC
20
Tch
Channel Temperature
+150
-55 to +150
+250
Tstg
Tmax
Storage Temperature
ºC
Max. Assembly Temp (20 sec max)
ºC
*Operation of this device above any one of these parameters may cause permanent damage.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 1 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Electrical Specifications: Vds=6V,Vg=-0.85V, Ids=2000mA, Ta=25 C Z0=50 ohm
Units
Typical Data
Parameter
Frequency Range
Gain (Typ / Min)
GHz
dB
+/-dB
dB
21-27
25 / 24
1 / 1.5
15/12
15/12
34/33
-45
Gain Flatness (Typ / Max)
Input RL(Typ/Max)
Output RL(Typ/Max)
Output P1dB(Typ/Min)
IM3 Level @Po=20dBm/tone
Output Psat(Typ/Min)
Operating Current at P1dB
(Typ/Max)
dB
dBm
dBc
dBm
35/33.5
mA
2000 / 2500
3.8
Thermal Resistance
C /W
(1) Output IM3 is measured with two tones at output power of 20 dBm/tone separated by 20 MHz.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 2 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Typical RF Performance: Vds=6V, Vg=-0.85V, Ids=2000mA, Z0=50 ohm, Ta=25 ºC
DB(|S(1,1)|)
MEAS
35
30
25
20
15
10
5
DB(|S(2,1)|)
MEAS
DB(|S(2,2)|)
MEAS
0
-5
-10
-15
-20
15
17
19
21
23
25
27
29
31
33
Frequency (GHz)
S11[dB], S21[dB], and S22[dB] vs. Frequency
IM3 Level vs. single tone output power [dBm/tone]
P-1 and Psat vs. Frequency
Pout[dBm], and Ids[mA] vs. Input power [dBm]
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 3 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Typical Bias dependent RF Performance:
IM3 Level [dBc] vs. output power/tone [dBm]
@Vds=6V, Idsq=2.5A
Bias dependent P1 vs. Frequency
Pout[dBm], and Ids[mA] vs. Input power [dBm]
@Vds=6V, Idsq=1.5A
Bias dependent P-3 vs. Frequency
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 4 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Typical Power Detector Voltages: Vds=6V, Idsq=2A, Frequency=22GHz
Detector Voltages (DET_O and DET_R) vs. Output RF power
Vdelta axis is Log-scale.
+5V
100KΩ
100KΩ
10KΩ
10KΩ
DET_O
+5V
DET_R
-
10KΩ
Vout=DET_R – DET_O
+
10KΩ
-5V
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 5 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Applications
The MMA212734 MMIC power amplifier is designed for use as a power stage amplifier in microwave
transmitters. It is ideally suited for 21 to 27GHz band point to point radio applications requiring a flat gain
response and excellent linearity performance. This amplifier is provided as a 5x5mm QFN package, and the
packaged amplifier is fully compatible with industry standard high volume surface mount PCB assembly
processes.
Biasing and Operation
The recommended bias conditions for best performance for the MMA212734 are VDD = 6.0V, Idsq = 2000mA.
Performance improvements are possible depending on applications. The drain bias voltage range is 5 to 6V
and the quiescent drain current biasing range is 1500mA to 2800mA. A single DC gate supply connected to Vg
will bias all the amplifier stages. Muting can be accomplished by setting Vg to the pinch-off voltage (Vp=-2V).
The gate voltage (Vg) should be applied prior to the drain voltages (Vd1, Vd2, Vd3, Vd4) during power up and
removed after the drain voltages during power down. The RF input and output ports are DC decoupled
internally. Typical DC supply connection with bi-passing capacitors for the MMA212734 is shown in following
pages.
MMA212734 contains optional temperature compensated output power detectors. Typical detection
voltage vs. output power is shown in previous page. To obtain over temperature compensation, a recommended
differential amplifier is required.
Assembly Techniques
GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage,
handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are
critical factors in successful GaAs MMIC performance and reliability.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 6 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Package Pin-out:
Pin
4
21
Description
RF Input
RF Output
Vg
10
31
Vd1
29
Vd2
28
Vd3
15, 26
18
Vd4
DET_Reference
DET_Output
Ground
23
1, 3, 5, 8 ,9, 16, 17, 20, 22,
24, 25, 32, 33
2, 6, 7, 11, 12, 13, 14, 19,
27, 30
N/C
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 7 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Mechanical Information:
The units are in [mm].
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 8 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Application Circuit:
DET_O
Vd1 Vd2 Vd3 Vd4
1uF
1uF 1uF
1uF
10Ω
10Ω
10Ω
10Ω
0.01u
0.01u
0.01u 0.01u
1
2
3
24
23
22
RF Input
RF Output
GND
GND
4
5
21
20
RF IN
GND
RF OUT
GND
6
7
8
19
18
17
10Ω
0.01u
10Ω
10Ω
0.01u
1uF
0.01u
Note:
1uF
Vd4 pins is able to supply
either side.
Vg1
Vd4
DET_R
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 9 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Recommended Application Board Design:
Board Material is 10mil (Dielectric) thickness Rogers 4350B with 0.5oz cupper clads.
Board is soldered on a gold plated solid cupper block and adequate heat-sinking is required for 16.8W total
power dissipation.
Part
Description
C1, C2, C3, C4, C5, C6
C7, C8, C9, C10, C11, C12
R1, R2, R3, R4, R5, R6
1uF capacitor (0603)
0.01uF Capacitor (0402)
10Ω Resistor (0402)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 10 of 11
MMA-212734-R5
21-27GHz, 3W Power Amplifier
Data Sheet
October, 2012
Recommended Application Board Design:
Board Material is 10mil (Dielectric) thickness Rogers 4350B with 0.5oz cupper clads. The board material and
mounting pattern, as defined in the data sheet, optimizes RF performance and is strongly recommended. An
electronic drawing of the land pattern is available upon request from MwT Sales & Application Engineering.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
MMA212734-R5 Rev 3.6 data sheet is subject to change without notice. All rights reserved © 2012
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 11 of 11
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