MMA-22010 [IXYS]
Wide Band Low Power Amplifier, 2000MHz Min, 20000MHz Max,;
| 型号： | MMA-22010 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Wide Band Low Power Amplifier, 2000MHz Min, 20000MHz Max, 射频 微波 |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMA-22010
2-20 GHz GaAs MMIC Amp-Chip
Advanced Product Information
June 2006
Features:
•
•
•
•
•
•
•
•
Single Bias +4V, 60mA Operation
Input/Output 50-Ohm Matched
On-Chip Output DC Blocking
On-Chip DC Bias RF Choke and Bypass Cap
Gain: 7.5 dB
P1dB: 11dBm
Small Size: 2.35 x 1.5 x 0.1 mm
Reliable PHEMT Technology
Description:
The MMA-22010 is a small size 2~20 GHz gain block amplifier realized in advanced GaAs PHEMT with on-chip via-
hole grounding technology. On-chip output blocking capacitor, and on-chip DC supply RF choke allow this amp to be
extremely easily DC biased and RF-connected requiring only three bonding connections. It is directly cascadable
and unconditionally stable. The MMA-22010 can be DC and RF tested and screened on-wafer to insure
performance.
Electrical Specifications: (Vds=6.0V, TA=25 °C)
Parameter
Units
GHz
dB
Min
2-20
6
Typ
Max
Frequency
Small Signal Gain
Gain Flatness
Input Return Loss
Output Return Loss
Noise Figure
7.5
1.0
-14
-14
5
+dB
dB
-10
-10
dB
dB
Output P1dB
dBm
10
+12
Output IP3
Δf=100MHz, Po= (@Pin=-20dBm)
dBm
mA
+22
60
DC Current
80
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
MMA-22010
2-20 GHz GaAs MMIC Amp-Chip
Advanced Product Information
June 2006
Absolute Maximum Ratings:
Parameter
Rating
Positive Supply Voltage
Current
Channel Temperature
Storage Temperature
Input Power
+8 V
150 mA
+175oC
-65 oC to +175oC
+15 dBm
Measured Data:
MM A- 22010, S S G, VS WR, ON- Waf er Chip Dat a
+4. 0V, 65mA @ 25 o C
MMA-22010, Po-1, Carrier-Mounted IC Data
+4.0V, 65mA @25oC
20
10
20
15
10
5
SSG,
0
Po-1, dBm
VSWR, In,
VSWR, out,
-10
-20
-30
0
-5
5
15
25
0
10
20
Freq (GHz)
Freq (GHz)
Assembly Diagram:
Notes:
1. Bonding wire: 0.7 to 1.0 mil diameter Au wire.
2. Gate bias connection VGG and CG is optional and can be left open. It is connected in case AGC is required and where lower DC current
and higher RF efficiency is desired.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
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