MCD132-08IO1 [IXYS]
Thyristor Modules Thyristor/Diode Modules; 晶闸管模块可控硅/二极管模块
| 型号： | MCD132-08IO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Thyristor Modules Thyristor/Diode Modules |
| 文件： | 总4页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCC132
MCD132
ITRMS = 2x 300 A
ITAVM = 2x 130 A
VRRM = 800-1800 V
Thyristor Modules
Thyristor/Diode Modules
7
6
3
4
VRSM
VDSM
VRRM
VDRM
Type
2
5
1
V
V
Version 1
Version 1
900
1300
1500
1700
1900
800
1200
1400
1600
1800
MCC 132-08io1
MCC 132-12io1
MCC 132-14io1
MCC 132-16io1
MCC 132-18io1
MCD 132-08io1
MCD 132-12io1
MCD 132-14io1
MCD 132-16io1
MCD 132-18io1
3
3
6 7 1
5 4 2
Symbol
Test Conditions
Maximum Ratings
MCC
MCD
ITRMS, IFRMS
TVJ = TVJM
TC = 85°C; 180° sine
300
130
A
A
ITAVM FAVM
, I
1
5 4 2
ITSM, IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
4750
5080
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
4230
4530
A
A
òi2dt
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
113 000
108 000
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
89 500
86 200
A2s
A2s
Features
●
International standard package
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins
(di/dt)cr
TVJ = TVJM
repetitive, IT = 500 A
150
A/ms
●
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.5 A
●
●
●
●
non repetitive, IT = 500 A
VDR = 2/3 VDRM
500
A/ms
V/ms
diG/dt = 0.5 A/ms
(dv/dt)cr
PGM
TVJ = TVJM
;
1000
RGK = ¥; method 1 (linear voltage rise)
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
TVJ = TVJM
IT = ITAVM
tP = 30 ms
tP = 500 ms
120
60
8
W
W
W
●
●
PGAV
VRGM
●
10
V
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
●
●
Contactless switches
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
3000
3600
V~
V~
Advantages
●
Space and weight savings
Simple mounting
Improved temperature and power
IISOL £ 1 mA
●
Md
Mounting torque (M6)
Terminal connection torque (M6)
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
●
cycling
Reduced protection circuits
●
Weight
Typical including screws
125
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 4
MCC132
MCD132
Symbol
IRRM, IDRM
VT, VF
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM; VD = VDRM
IT, IF = 300 A; TVJ = 25°C
10 mA
1.36
V
VT0
rT
For power-loss calculations only (TVJ = 125°C)
0.8
1.5 mW
V
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
2.5
2.6
150 mA
200 mA
V
V
T
VJ = -40°C
VGD
IGD
TVJ = TVJM
;
VD = 2/3 VDRM
0.2
10 mA
V
IL
TVJ = 25°C; tP = 30 ms; VD = 6 V
IG = 0.5 A; diG/dt = 0.5 A/ms
300 mA
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
200 mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.5 A; diG/dt = 0.5 A/ms
2
ms
tq
TVJ = TVJM; IT = 160 A, tP = 200 ms; -di/dt = 10 A/ms typ. 150
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM
ms
QS
IRM
TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/ms
550
235
mC
A
RthJC
RthJK
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
0.23 K/W
0.115 K/W
0.33 K/W
0.165 K/W
other values
see Fig. 8/9
dS
dA
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7 mm
9.6 mm
50 m/s2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = right for pin pair 6/7)
UL 758, style 1385,
CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC
MCD
© 2000 IXYS All rights reserved
2 - 4
MCC 132
MCD 132
4000
ITSM
106
A2s
i2t
A
3000
50 Hz
80 % VRRM
TVJ = 45°C
T
VJ = 125°C
2000
1000
0
105
TVJ = 45°C
TVJ = 125°C
104
s
ms
t
0.001
0.01
0.1
1
1
10
t
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
© 2000 IXYS All rights reserved
3 - 4
MCC 132
MCD 132
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
180°
120°
60°
0.230
0.244
0.255
0.283
0.321
30°
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.0095
0.0175
0.203
0.001
0.065
0.4
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
180°
120°
60°
0.330
0.344
0.355
0.383
0.421
30°
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0095
0.0175
0.203
0.1
0.001
0.065
0.4
1.29
© 2000 IXYS All rights reserved
4 - 4
相关型号：
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Silicon Controlled Rectifier, 300A I(T)RMS, 181000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
IXYS
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