MCD161-20IO1 [IXYS]
High Voltage Thyristor Module; 高压晶闸管模块
| 型号： | MCD161-20IO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage Thyristor Module |
| 文件： | 总3页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCC 161
MCD 161
ITRMS = 2x300 A
ITAVM = 2x165 A
High Voltage Thyristor Module
VRRM = 2000-2200 V
3
6 7 1
5 4 2
7
MCC
MCD
6
VRSM
VDSM
VRRM Type
VDRM
3
4
2
5
1
V
V
2100 2000 MCC 161-20io1 MCD 161-20io1
2300 2200 MCC 161-22io1 MCD 161-22io1
3
1
5 4 2
Symbol
Conditions
Maximum Ratings
Features
ITRMS
ITAVM
TVJ = TVJM
TC = 85°C; 180° sine
300
165
A
A
• International standard package
• Direct Copper Bonded Al2O3-ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Keyed gate/cathode twin pins
ITSM
TVJ = 45°C; t = 10 ms (50 Hz)
VR = 0
6000
6400
A
A
t = 8.3 ms (60 Hz)
TVJ = TVJM
;
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
5250
5600
A
A
VR = 0
I2dt
TVJ = 45°C; t = 10 ms (50 Hz)
180000
170000
A2s
A2s
Applications
VR = 0
t = 8.3 ms (60 Hz)
• Motor control
• Power converter
• Heat and temperature control for
industrial furnaces and chemical
processes
TVJ = TVJM
VR = 0
;
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
137000
128000
A2s
A2s
(di/dt)cr
TVJ = TVJM
;
repetitive, IT = 500 A
150
A/µs
f = 50 Hz; tP = 200 µs;
VD = 2/3 VDRM
IG = 0.5 A;
;
• Lighting control
• Contactless switches
non repetitive, IT = ITAVM
500
A/µs
V/µs
diG/dt = 0.5 A/µs
TVJ = TVJM; VDR = 2/3 VDRM
Advantages
(dv/dt)cr
PGM
1000
RGK = ∞; method 1 (linear voltage rise)
• Space and weight savings
• Simple mounting
• Improved temperature and power
cycling
TVJ = TVJM
;
;
tP = 30 µs
tP = 500 µs
120
60
8
W
W
W
IT = ITAVM
PGAV
VRGM
• Reduced protection circuits
10
V
TVJ
TVJM
Tstg
-40...125
125
-40...125
°C
°C
°C
VISOL
50/60 Hz, RMS; t = 1 min
IISOL < 1 mA; t = 1 s
3000
3600
V~
V~
Md
Mounting torque (M6)
Terminal connection torque (M6)
2.25-2.75
4.5-5.5
Nm
Nm
Weight
Typical including screws
125
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions
© 2005 IXYS All rights reserved
1 - 3
MCC 161
MCD 161
Symbol
IRRM, IDRM
VT
Conditions
VR = VRRM
Characteristic Values
;
TVJ = TVJM
40
mA
V
IT = 300A; TVJ = 25°C
1.36
VT0
rT
For power-loss calculations only (TVJ = TVJM
)
0.8
1.6
V
mΩ
VGT
VD = 6 V; TVJ = 25°C
TVJ = -40°C
2
2.6
V
V
IGT
VD = 6 V; TVJ = 25°C
TVJ = -40°C
150
200
mA
mA
VGD
IGD
VD = 2/3VDRM; TVJ = TVJM
VD = 2/3VDRM; TVJ = TVJM
0.25
10
V
mA
IL
TVJ = 25°C; VD = 6 V; tP = 30 µs
diG/dt = 0.45 A/µs; IG = 0.45 A
200
mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
150
2
mA
µs
tgd
TVJ = 25°C; VD = 1/2 VDRM
diG/dt = 0.5 A/µs; IG = 0.5 A
tq
TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 µs
dv/dt = 20 V/µs; IT = 160 A; -di/dt = 10A/µs
typ. 150
µs
Fig. 1 Gate trigger characteristics
QS
IRM
TVJ = TVJM
-di/dt = 50 A/µs; IT = 300 A
550
235
µC
A
RthJC
per thyristor; DC current
per module
per thyristor; DC current
per module
0.155 K/W
0.078 K/W
0.225 K/W
0.113 K/W
RthJK
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7 mm
9.6 mm
50 m/s2
Dimensions in mm (1 mm = 0.0394")
Fig. 2 Gate trigger delay time
500
IT,
A
IF
400
350
300
250
200
150
100
50
TVJ = 125°C
TVJ = 25°C
0
0.0
0.5
1.0
1.5
2.0
V
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
VT, VF
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = right for pin pair 6/7)
UL 758, style 1385,
CSA class 5851, guide 460-1-1
Fig 3: Forward current vs. voltage
drop per thyristor/diode
© 2005 IXYS All rights reserved
2 - 3
MCC 161
MCD 161
106
A2s
350
6000
50 Hz
80% VRRM
I2t
A
300
DC
5000
A
ITAVM
,
IFAVM
ITSM
,
IFSM
TVJ
=
45°C
200
150
100
50
TVJ = 45°C
180° sin
105
3000
2000
1000
0
120° rect
TVJ = 125°C
60° rect
30° rect
TVJ = 125°C
104
0
ms
t
0.001
0.01
0.1
1
1
s
10
0
25
50
75
°C
125
t
TC
Fig. 4: Surge overload current
TSM, IFSM = f(t)
Fig. 5: I2t versus time per diode
Fig. 6: Max. forward current at case
temperature ITAVM/FAVM = f (TC,d)
I
2000
400
W
320
280
240
200
160
120
80
RthKA K/W
0.02
RthKA K/W
W
0.1
0.2
0.3
0.5
0.8
1.5
2
Ptot
Ptot
0.04
1600
1400
1200
1000
800
600
400
200
0
0.06
0.1
0.15
0.20
0.30
DC
180° sin
120° rect
60° rect
30° rect
40
0
A
0
100 200 300 400
IDAVM
0
25
50
75 C125
TA
C
0
50 100 150 A250
IFAVM, ITAVM
0
25
50
75 125
TA
Fig. 7: Power dissipation vs. on-state current and ambient
temperature (per thyristor/diode)
Fig. 8: Power dissipation vs. direct output current and
ambient temperature (three phase rectifier bridge)
0.3
RthJC for various condition angles:
d
RthJC (K/W)
K/W
DC_
180°
120°
60°
0.155
0.171
0.184
0.222
0.294
0.2
ZthJC
30°
Constants for ZthJC calculation (DC):
0.1
30°
60°
i
Rthi (K/W)
ti (s)
120°
180°
DC
1
2
3
4
5
0.012
0.008
0.03
0.073
0.032
0.00014
0.019
0.18
0.52
1.6
0.0
10-3
10-2
10-1
100
101
102
s
t
Fig. 9: Transient thermal impedance junction to case ZthjC
at various conduction angles
© 2005 IXYS All rights reserved
3 - 3
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