L208 [IXYS]

Power Schottky Rectifier; 功率肖特基整流器
L208
型号: L208
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Power Schottky Rectifier
功率肖特基整流器

文件: 总2页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DSS 6-0045AS  
IFAV = 6 A  
VRRM = 45 V  
VF = 0.5 V  
Power Schottky Rectifier  
TO-252 AA  
A
C
VRSM  
V
VRRM  
V
Type  
marking  
on product  
A
A
45  
45  
DSS 6-0045AS  
6Y045AS  
C (TAB)  
A = Anode, C = Cathode , TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
• International standard package  
• Very low VF  
• Extremely low switching losses  
• Low IRM-values  
• Epoxy meets UL 94V-0  
IFRMS  
IFAV  
20  
6
A
A
TC = 165°C; rectangular, d = 0.5  
IFSM  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
IAS = 13 A; L = 180 µH; TVJ = 25°C; non repetitive  
VA =1.5 • VRRM typ.; f=10 kHz; repetitive  
80  
24  
A
mJ  
A
EAS  
IAR  
1.3  
Applications  
• Rectifiers in switch mode power  
supplies (SMPS)  
• Free wheeling diode in low voltage  
converters  
(dv/dt)cr  
1000  
V/µs  
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Ptot  
TC = 25°C  
50  
W
g
Advantages  
• High reliability circuit operation  
• Low voltage peaks for reduced  
protection circuits  
Weight  
typical  
0.3  
• Low noise switching  
• Low losses  
Symbol  
IR ꢀ  
VF  
Conditions  
Characteristic Values  
typ.  
max.  
TVJ = 25°C VR = VRRM  
TVJ = 125°C VR = VRRM  
0.3  
2.5  
mA  
mA  
Dimensions see Outlines.pdf  
IF = 6 A;  
IF = 6 A;  
IF = 12 A;  
TVJ = 125°C  
TVJ 25°C  
TVJ = 125°C  
0.50  
0.63  
0.59  
V
V
V
=
RthJC  
3.0  
K/W  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, Conditions and dimensions.  
© 2003 IXYS All rights reserved  
1 - 2  
DSS 6-0045AS  
100  
A
1000  
100  
mA  
pF  
CT  
10  
TVJ=175°C  
150°C  
IR  
IF  
1
125°C  
100°C  
10  
0.1  
0.01  
75°C  
50°C  
TVJ  
=
D2  
175°C  
150°C  
125°C  
25°C  
0.001  
25°C  
TVJ= 25°C  
1
.0  
100  
0.0001  
V
50  
0.2  
0.4  
0.6  
0.8  
VF  
1.0  
0
10  
20  
30  
40  
VR  
V
0
10  
20  
30  
40 V 50  
VR  
Fig. 1 Maximum forward voltage  
drop characteristics  
Fig. 2 Typ. value of reverse current IR  
versus reverse voltage VR  
Fig. 3 Typ. junction capacitance CT  
versus reverse voltage VR  
14  
W
12  
25  
A
P(AV)  
20  
10  
IF(AV)  
DC  
d = 0.5  
15  
10  
5
8
6
4
2
0
d =  
DC  
0.5  
0.33  
0.25  
0.17  
0.08  
0
A
0
5
10  
15  
0
50  
100  
150 °C 200  
TC  
IF(AV)  
Fig. 4 Average forward current IF(AV)  
versus case temperature TC  
Fig. 5 Forward power loss  
characteristics  
10  
K/W  
D = 0.5  
0.33  
0.25  
ZthJC  
1
0.17  
0.08  
Single Pulse  
0.1  
DSS 6-0045AS  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
s
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles  
© 2003 IXYS All rights reserved  
Note: All curves are per diode  
2 - 2  

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