L209 [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | L209 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXDN 75N120 VCES
IC25
= 1200 V
= 150 A
High Voltage IGBT
VCE(sat) typ = 2.2 V
Short Circuit SOA Capability
Square RBSOA
C
E
miniBLOC, SOT-227 B
E153432
E
G
G
E
E
C
E = Emitter ●,
G = Gate,
C = Collector
E = Emitter ●
Symbol
Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
● Either Emitter terminal can be used as
Main or Kelvin Emitter
TJ = 25°C to 150°C; RGE = 20 kW
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C
150
95
A
A
A
Features
TC = 90°C
●
TC = 90°C, tp = 1 ms
190
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
●
RBSOA
VGE = ±15 V, TJ = 125°C, RG = 15 W
Clamped inductive load, L = 30 µH
ICM = 150
VCEK < VCES
A
●
●
●
tSC
(SCSOA)
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 15 W, non repetitive
10
µs
●
easy paralleling
PC
TC = 25°C
IGBT
660
W
●
●
MOS input, voltage controlled
International standard package
miniBLOC
VISOL
50/60 Hz; IISOL £ 1 mA
2500
V~
TJ
-40 ... +150
-40 ... +150
°C
°C
Tstg
Advantages
Md
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
●
Space savings
Easy to mount with 2 screws
High power density
●
●
Weight
30
g
Typical Applications
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
●
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
●
min. typ. max.
●
V(BR)CES
VGE(th)
ICES
VGE = 0 V
1200
4.5
V
V
●
●
Switch-mode and resonant-mode
IC = 3 mA, VCE = VGE
VCE = VCES
6.5
power supplies
TJ = 25°C
TJ = 125°C
4 mA
mA
6
IGES
VCE = 0 V, VGE = ± 20 V
IC = 75 A, VGE = 15 V
± 500 nA
VCE(sat)
2.2
2.7
V
© 2000 IXYS All rights reserved
1 - 4
IXDN 75N120
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
Cies
Coes
Cres
5500
750
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
330
Qg
IC = 75 A, VGE = 15 V, VCE = 0.5 VCES
360
nC
td(on)
tr
td(off)
tf
100
50
ns
ns
Inductive load, TJ = 125°C
650
50
ns
IC = 75 A, VGE = ±15 V,
ns
VCE = 600 V, RG = 15 W
Eon
Eoff
12.1
10.5
mJ
mJ
M4 screws (4x) supplied
Dim.
Millimeter
Inches
RthJC
RthCK
0.19 K/W
K/W
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
Package with heatsink compound
0.1
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
© 2000 IXYS All rights reserved
2 - 4
IXDN 75N120
175
175
VGE=17V
15V
VGE=17V
15V
TJ = 25°C
TJ = 125°C
A
A
13V
11V
13V
11V
IC
IC
125
100
75
50
25
0
125
100
75
50
25
0
9V
9V
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V
0.0 0.5 1.0
1.5 2.0 2.5 3.0
VCE
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150
A
100
75
VCE = 20V
TJ = 25°C
IC
50
25
0
5
6
7
8
9
10
VGE
11 V
Fig. 3 Typ. transfer characteristics
20
V
VCE = 600V
IC = 75A
15
10
5
VGE
IXDN75N120
0
nC
0
100
200
300
400
QG
Fig. 4 Typ. turn on gate charge
© 2000 IXYS All rights reserved
3 - 4
IXDN 75N120
40
160
20
800
Eoff
mJ
mJ
ns
ns
Eon
td(off)
30
20
10
0
120
15
10
5
600
Eoff
Eon
td(on)
t
t
tr
80
40
0
400
VCE = 600V
V
GE = ±15V
VCE = 600V
VGE = ±15V
R
G = 15
200
0
TJ = 125°C
R
G = 15
TJ = 125°C
tf
0
0
50
100
150
A
0
50
100
150 A
IC
IC
Fig. 5 Typ. turn on energy and switching
times versus collector current
Fig. 6 Typ. turn off energy and switching
times versus collector current
200
2000
25
mJ
20
25
td(on)
VCE = 600V
VCE = 600V
VGE = ±15V
IC = 75A
TJ = 125°C
mJ
ns
ns
VGE = ±15V
td(off)
Eon
160
120
80
40
0
20
15
10
5
1600
IC = 75A
Eoff
Eon
TJ = 125°C
t
t
15
10
5
1200
800
400
0
Eoff
tr
tf
0
0
0
8
16
24
32
40
48
56
0
8
16
24
32
40
48
56
RG
RG
Fig. 7 Typ. turn on energy and switching
times versus gate resistor
Fig.8 Typ. turn off energy and switching
times versus gate resistor
200
A
1
K/W
0.1
150
ZthJC
ICM
0.01
RG = 15
100
50
0
TJ = 125°C
VCEK < VCES
0.001
0.0001
single pulse
IXDN75N120
0.00001
0.00001 0.0001
0.001
0.01
0.1
1
V
s
0
200 400 600 800 1000 1200
VCE
t
Fig. 9 Reverse biased safe operating area
RBSOA
Fig. 10 Typ. transient thermal impedance
© 2000 IXYS All rights reserved
4 - 4
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