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IXTC26N50P [IXYS]

PolarHV Power MOSFET; PolarHV功率MOSFET
IXTC26N50P
型号: IXTC26N50P
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

PolarHV Power MOSFET
PolarHV功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总5页 (文件大小:572K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IXTC280N055T

Power Field-Effect Transistor, 145A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN

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IXTC36P15P

Power Field-Effect Transistor,

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IXTC62N15P

Power Field-Effect Transistor, 36A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN

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IXTC75N10

N-Channel Enhancement Mode

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IXTC96N25T

Power Field-Effect Transistor, 40A I(D), 250V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS220, 3 PIN

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IXTD01N100D-1M

Power Field-Effect Transistor, 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.077 X 0.077 INCH, DIE

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IXTD02N50D-1M

Power Field-Effect Transistor, 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.077 X 0.077 INCH, DIE

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IXTD100N25P-8S

Power Field-Effect Transistor, 250V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE

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IXTD102N30P-88

Power Field-Effect Transistor, 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE

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IXTD10N100

Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE

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IXTD10P50

Power Field-Effect Transistor, 500V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2

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IXTD10P60-7B

Power Field-Effect Transistor, 500V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.384 X 0.283 INCH, DIE

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IXTD11P50-7B

Power Field-Effect Transistor, 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.348 X 0.283 INCH, DIE

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IXTD120N15P-7S

Power Field-Effect Transistor, 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.351 X 0.281 INCH, DIE

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IXTD120N20P-8S

Power Field-Effect Transistor, 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE

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IXTD120N25P-88

Power Field-Effect Transistor, 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE

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IXTD12N90-7L

Power Field-Effect Transistor, 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-7

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IXTD16P20-5B

Power Field-Effect Transistor, 200V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.259 X 0.259 INCH, DIE

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IXTD170N10P-8S

Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.438 X 0.281 INCH, DIE

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IXTD180N15P-88

Power Field-Effect Transistor, 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE

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