IXTD102N30P-88 [IXYS]
Power Field-Effect Transistor, 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE;型号: | IXTD102N30P-88 |
厂家: | IXYS CORPORATION |
描述: | Power Field-Effect Transistor, 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE 开关 晶体管 |
文件: | 总1页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IXTD10P60-7B
Power Field-Effect Transistor, 500V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.384 X 0.283 INCH, DIEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IXTD11P50-7B
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IXTD120N15P-7S
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IXTD120N20P-8S
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IXTD16P20-5B
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