IXGH30N60B4 [IXYS]

High-Gain IGBT; 高增益IGBT
IXGH30N60B4
型号: IXGH30N60B4
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

High-Gain IGBT
高增益IGBT

晶体 晶体管 功率控制 瞄准线 双极性晶体管 栅 局域网
文件: 总2页 (文件大小:82K)
下载:  下载PDF数据表文档文件

IXGH30N60BD1

HiPerFASTTM IGBT with Diode

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80 IXYS

IXGH30N60BD1

HiPerFASTTM IGBT with Diode

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19 IXYS

IXGH30N60BS

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD

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16 ETC

IXGH30N60BU1

HiPerFAST IGBT with Diode

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29 IXYS

IXGH30N60BU1

HiPerFAST IGBT with Diode

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17 IXYS

IXGH30N60BU1S

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD

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9 ETC

IXGH30N60C2

HiPerFAST IGBT

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13 IXYS

IXGH30N60C2

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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3 IXYS

IXGH30N60C2D1

HiPerFAST IGBT with Diode

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25 IXYS

IXGH30N60C3

GenX3 600V IGBT

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23 IXYS

IXGH30N60C3

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3

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0 IXYS

IXGH30N60C3C1

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

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29 IXYS

IXGH30N60C3D1

GenX3 600V IGBT with Diode

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15 IXYS

IXGH30N60C3D1

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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18 IXYS

IXGH30N60U1

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-247AD

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25 ETC