IXGH30N60BS [ETC]

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD ; 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 60A I(C ) | TO- 247SMD\n
IXGH30N60BS
型号: IXGH30N60BS
厂家: ETC    ETC
描述:

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD
晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 60A I(C ) | TO- 247SMD\n

晶体 晶体管 电动机控制 双极性晶体管 栅 局域网
文件: 总2页 (文件大小:203K)
下载:  下载PDF数据表文档文件

IXGH30N60BU1

HiPerFAST IGBT with Diode

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29 IXYS

IXGH30N60BU1

HiPerFAST IGBT with Diode

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17 IXYS

IXGH30N60BU1S

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | TO-247SMD

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9 ETC

IXGH30N60C2

HiPerFAST IGBT

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13 IXYS

IXGH30N60C2

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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3 IXYS

IXGH30N60C2D1

HiPerFAST IGBT with Diode

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25 IXYS

IXGH30N60C3

GenX3 600V IGBT

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23 IXYS

IXGH30N60C3

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3

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0 IXYS

IXGH30N60C3C1

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

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29 IXYS

IXGH30N60C3D1

GenX3 600V IGBT with Diode

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15 IXYS

IXGH30N60C3D1

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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18 IXYS

IXGH30N60U1

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-247AD

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25 ETC

IXGH31N60

Ultra-Low VCE(sat) IGBT

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21 IXYS

IXGH31N60D1

Ultra-Low V IGBT with Diode

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8 IXYS

IXGH31N60U1

Ultra-Low VCE(sat) IGBT with Diode

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16 IXYS