关闭背景特效

IXGH30N120B3 [IXYS]

Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3;

IXGH30N120B3


元器件型号：	IXGH30N120B3
生产厂家：	IXYS CORPORATION
描述和应用：	Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, PLASTIC PACKAGE-3 局域网栅瞄准线功率控制晶体管
PDF文件：	总6页 (文件大小：211K)
下载文档：	下载PDF数据表文档文件
型号参数：IXGH30N120B3参数

IXGH30N120B3D1

GenX3 1200V IGBT

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15 IXYS

IXGH30N120C3H1

GenX3 1200V IGBT

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19 IXYS

IXGH30N30

HiPerFAST IGBT

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34 IXYS

IXGH30N30S

TRANSISTOR | IGBT | N-CHAN | 250V V(BR)CES | 60A I(C) | TO-247SMD

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19 ETC

IXGH30N50

TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 50A I(C) | TO-247

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26 ETC

IXGH30N50A

TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 50A I(C) | TO-247

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30 ETC

IXGH30N60

Low VCE(sat) IGBT, High speed IGBT

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98 IXYS

IXGH30N60A

Low VCE(sat) IGBT, High speed IGBT

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65 IXYS

IXGH30N60AU1

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-247AD

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51 ETC

IXGH30N60B

HiPerFASTTM IGBT

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41 IXYS

IXGH30N60B2

HiPerFAST IGBT

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36 IXYS

IXGH30N60B2D1

HiPerFAST IGBT

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39 IXYS

IXGH30N60B4

High-Gain IGBT

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14 IXYS

IXGH30N60BD1

HiPerFASTTM IGBT with Diode

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80 IXYS

IXGH30N60BD1

HiPerFASTTM IGBT with Diode

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19 IXYS

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