IXFM12N100 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFM12N100 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
VDSS
ID25 RDS(on)
IXFH/IXFM10N100
IXFH/IXFM12N100
IXFH13N100
1000V 10 A 1.20 W
1000V 12 A 1.05 W
1000V 12.5 A 0.90 W
trr £ 250 ns
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
10N100
12N100
13N100
10N100
12N100
13N100
10N100
12N100
13N100
10
12
12.5
40
48
50
10
12
12.5
A
A
A
A
A
A
A
A
A
TO-204 AA (IXFM)
TC = 25°C, pulse width limited by TJM
TC = 25°C
G
D
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
G = Gate,
S = Source,
D = Drain,
TAB = Drain
PD
TJ
TC = 25°C
300
W
-55 ... +150
°C
Features
TJM
Tstg
150
-55 ... +150
°C
°C
● Internationalstandardpackages
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
● Low package inductance
- easy to drive and to protect
● Fast intrinsic Rectifier
Weight
TO-204 = 18 g, TO-247 = 6 g
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
●
DC-DC converters
Synchronousrectification
Battery chargers
Switched-modeandresonant-mode
●
min. typ. max.
●
●
VDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
1000
2.0
V
V
powersupplies
VGS(th)
4.5
●
DC choppers
● AC motor control
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 mA
●
Temperatureandlightingcontrols
Low voltage relays
●
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
Advantages
●
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
10N100
12N100
13N100
1.20
1.05
0.90
W
W
W
Easy to mount with 1 screw (TO-247)
(isolatedmountingscrewhole)
Space savings
High power density
●
●
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91531F(4/99)
1 - 4
IXFH 10N100 IXFH 12N100 IXFH 13N100
IXFM 10N100 IXFM 12N100
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
VDS = 10 V; ID = 0.5 • ID25, pulse test
6
10
S
Ciss
Coss
Crss
4000
310
70
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
21
33
50
50
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 W (External),
62 100
32 50
Qg(on)
Qgs
122 155
nC
nC
nC
Dim. Millimeter
Inches
Min. Max. Min. Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
30
50
45
80
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Qgd
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
RthJC
RthCK
0.42 K/W
K/W
E
F
4.32 5.49 0.170 0.216
0.25
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Symbol
IS
TestConditions
N
1.5 2.49 0.087 0.102
VGS = 0 V
10N100
12N100
13N100
10
12
12.5
A
A
A
TO-204 AA (IXFM) Outline
ISM
Repetitive;
pulse width limited by TJM
10N100
12N100
13N100
40
48
50
A
A
A
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
TJ = 25°C
TJ = 125°C
250 ns
400 ns
IF = IS
-di/dt = 100 A/ms,
VR = 100 V
QRM
TJ = 25°C
TJ = 125°C
1
2
mC
mC
IRM
TJ = 25°C
TJ = 125°C
10
15
A
A
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
B
38.61 39.12 1.520 1.540
19.43 19.94 0.785
-
C
D
6.40 9.14 0.252 0.360
0.97 1.09 0.038 0.043
E
F
1.53 2.92 0.060 0.115
30.15 BSC 1.187 BSC
G
H
10.67 11.17 0.420 0.440
5.21 5.71 0.205 0.225
J
K
16.64 17.14 0.655 0.675
11.18 12.19 0.440 0.480
Q
R
3.84 4.19 0.151 0.165
25.16 25.90 0.991 1.020
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFH 10N100 IXFH 12N100 IXFH 13N100
IXFM 10N100 IXFM 12N100
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
20
18
16
14
12
10
8
20
18
16
14
TJ = 25°C
VGS = 10V
7V
6V
12
TJ = 25°C
10
8
6
6
5V
4
4
2
2
0
0
0
5
10
15
20
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3
RDS(on) vs. Drain Current
Fig. 4
Temperature Dependence
of Drain to Source Resistance
1.5
1.4
1.3
1.2
1.1
1.0
0.9
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
TJ = 25°C
VGS = 10V
ID = 6A
VGS = 15V
0
5
10
15
20
25
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
20
18
16
14
12
10
8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VGS(th)
BVDSS
12N100
10N100
6
4
2
0
-50 -25
0
25 50 75 100 125 150
TC - Degrees C
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
© 2000 IXYS All rights reserved
3 - 4
IXFH 10N100 IXFH 12N100 IXFH 13N100
IXFM 10N100 IXFM 12N100
Fig.7 Gate Charge Characteristic Curve
10
9
8
7
6
5
4
3
2
1
0
VDS = 500V
ID = 6A
IG = 10mA
0
25
50
75
100
125
150
Gate Charge - nCoulombs
Fig.8 Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
4500
4000
3500
3000
2500
2000
1500
1000
500
20
18
16
14
12
10
8
Ciss
f = 1MHz
VDS = 25V
TJ = 125°C
6
TJ = 25°C
4
Coss
Crss
2
0
0
0
5
10
15
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS - Volts
VSD - Volts
Fig.10 Transient Thermal Impedance
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4 - 4
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