IXFM13N80 [IXYS]

HiPerFET Power MOSFETs; HiPerFET功率MOSFET


型号：	IXFM13N80
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs HiPerFET功率MOSFET
文件：	总4页 (文件大小：98K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFET^TM

Power MOSFETs

V_DSS

I_D25

R_DS(on)

IXFH/IXFM11N80

IXFH/IXFM13N80

800V 11 A 0.95 W

800V 13 A 0.80 W

t_rr£ 250 ns

N-Channel Enhancement Mode

High dv/dt, Low t_rr, HDMOS^TMFamily

Symbol

TestConditions

MaximumRatings

TO-247 AD (IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

800

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

I_DM

I_AR

T_C= 25°C

11N80

13N80

TO-204 AA (IXFM)

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

11N80

13N80

11N80

13N80

E_AR

T_C= 25°C

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

G = Gate,

S = Source,

D = Drain,

TAB = Drain

P_D

T_C= 25°C

300

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

• Internationalstandardpackages

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

-55 ... +150

T_L

1.6 mm (0.062 in.) from case for 10 s

Mountingtorque

300

°C

M_d

1.13/10 Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Applications

• DC-DC converters

• Synchronousrectification

• Battery chargers

• Switched-modeandresonant-mode

powersupplies

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DSS

V_GS(th)

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 4 mA

800

2.0

• DC choppers

• AC motor control

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

250 mA

• Temperatureandlightingcontrols

• Low voltage relays

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

• Easy to mount with 1 screw (TO-247)

(isolatedmountingscrewhole)

• Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

11N80

13N80

0.95

0.80

Pulse test, t £ 300 ms, duty cycle d £ 2 %

• High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

91528F(7/97)

1 - 4

IXFH 11N80

IXFM 11N80

IXFH 13N80

IXFM 13N80

Symbol

g_fs

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

TO-247 AD (IXFH) Outline

min. typ. max.

V_DS= 10 V; I_D= 0.5 • I_D25, pulse test

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

C_iss

C_oss

C_rss

4200

360

100

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 2 W (External)

63 100

32 50

Q_g(on)

Q_gs

128 155

Dim. Millimeter

Inches

Min. Max. Min. Max.

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

Q_gd

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

R_thJC

R_thCK

0.42 K/W

K/W

4.32 5.49 0.170 0.216

0.25

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

Source-DrainDiode

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

Symbol

I_S

TestConditions

1.5 2.49 0.087 0.102

V_GS= 0 V

11N80

13N80

TO-204 AA (IXFM) Outline

I_SM

V_SD

t_rr

Repetitive;

pulse width limited by T_JM

11N80

13N80

I_F= I_S, V_GS= 0 V,

Pulse test, t £ 300 ms, duty cycle d £ 2 %

1.5

T_J= 25°C

T_J= 125°C

250 ns

400 ns

I_F= I_S

-di/dt = 100 A/ms,

V_R= 100 V

Q_RM

I_RM

8.5

Dim.

Millimeter

Inches

Min. Max.

38.61 39.12 1.520 1.540

19.43 19.94 0.785

6.40 9.14 0.252 0.360

0.97 1.09 0.038 0.043

1.53 2.92 0.060 0.115

30.15 BSC 1.187 BSC

10.67 11.17 0.420 0.440

5.21 5.71 0.205 0.225

16.64 17.14 0.655 0.675

11.18 12.19 0.440 0.480

3.84 4.19 0.151 0.165

25.16 25.90 0.991 1.020

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

2 - 4

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

IXFH 11N80

IXFM 11N80

IXFH 13N80

IXFM 13N80

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

T_J= 25°C

V_DS= 10V

_GS= 10V

V_DS- Volts

V_GS- Volts

Fig. 3 R_DS(on)vs. Drain Current

Fig. 4 Temperature Dependence

of Drain to Source Resistance

1.40

1.35

1.30

1.25

1.20

1.15

1.10

1.05

1.00

0.95

0.90

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

T_J= 25°C

V_GS= 10V

I_D= 6.5A

V_GS= 15V

10 12 14 16 18 20 22 24 26

I_D- Amperes

-50 -25

75 100 125 150

T_J- Degrees C

Fig. 5 Drain Current vs.

Case Temperature

Fig. 6 Temperature Dependence of

Breakdown and Threshold Voltage

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

V_GS(th)

BV_DSS

13N80

11N80

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J- Degrees C

T_C- Degrees C

3 - 4

IXFH 11N80

IXFM 11N80

IXFH 13N80

IXFM 13N80

Fig.7 Gate Charge Characteristic Curve

Fig.8 Forward Bias Safe Operating Area

10µs

Limited by R_DS(on)

V_DS= 400V

_D= 13A

100µs

1ms

_G= 10mA

10ms

100ms

0.1

100

125

150

100

1000

Gate Charge - nCoulombs

V_DS- Volts

Fig.9 Capacitance Curves

Fig.10 Source Current vs. Source

to Drain Voltage

4500

4000

3500

3000

2500

2000

1500

1000

500

C_iss

f = 1 MHz

V_DS= 25V

T_J= 125°C

T_J= 25°C

C_oss

C_rss

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_CE- Volts

V_SD- Volts

Fig.11 Transient Thermal Impedance

0.1

D=0.5

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

0.01

0.001

Single Pulse

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

4 - 4

IXFM13N80 [IXYS]

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