FMM150-0075P [IXYS]
Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PAC; 沟槽功率MOSFET Phaseleg拓扑中ISOPLUS I4 -PAC
| 型号： | FMM150-0075P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PAC |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMM 150-0075P
ID25
VDSS
= 150 A
= 75 V
Trench Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PACTM
RDSontyp. = 4.7 mΩ
3
5
Preliminary data
T1
T2
4
1
2
1
5
Features
MOSFET T1/T2
• trench MOSFET
- very low on state resistance RDSon
Symbol
VDSS
Conditions
Maximum Ratings
- fast switching
TVJ = 25°C to TVJmax
75
20
V
V
• ISOPLUS i4-PACTM package
- isolated back surface
VGS
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
ID25
ID90
TC = 25°C
TC = 90°C
150
120
A
A
IF25
IF90
(body diode) TC = 25°C
(body diode) TC = 90°C
150
100
A
A
- industry standard outline
- UL registered E 72873
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
Applications
min.
typ. max.
• automotive
- AC drives - starter generator for 42V
etc.
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters - between 12V
and 42V system etc.
- electronic switches -replacing relays
and fuses
• power supplies
- DC-DC converters
- solar inverters
• battery supplied systems
- choppers or inverters for drives in
hand held tools
RDSon
VGSth
IDSS
VGS = 10 V;ID = ID90
4.7
6.2 mΩ
VDS = 20 V;ID = 1 mA
2
4
V
VDS = 75 V;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
10 µA
mA
0.1
IGSS
VGS = 20 V; VDS = 0 V
200 nA
Qg
Qgs
Qgd
225
30
85
nC
nC
nC
VGS= 10 V; VDS = 60 V; ID = 50 A
td(on)
tr
td(off)
tf
60
165
320
195
ns
ns
ns
ns
VGS= 10 V; VDS = 30 V
ID = 25 A; RG = 10 Ω
- battery chargers
VF
trr
(body diode) IF = 75 A;VGS = 0 V
1.1
90
1.5
V
(body diode) IF = 20A; -di/dt = 100A/µs; VDS = 30V
ns
RthJC
RthJH
0.6 K/W
K/W
with heat transfer paste
1.0
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
FMM 150-0075P
Component
Dimensions in mm (1 mm = 0.0394")
Symbol
IRMS
Conditions
Maximum Ratings
per pin
75
A
TVJ
Tstg
-55...+175
-55...+125
°C
°C
VISOL
FC
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
N
mounting force with clip
20...120
Symbol
Cp
Conditions
Characteristic Values
min.
typ. max.
coupling capacity between shorted
pins and mounting tab in the case
40
pF
dS,dA
dS,dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight
9
g
© 2004 IXYS All rights reserved
2 - 2
相关型号：
FMM151-0075P
Power Field-Effect Transistor, 150A I(D), 75V, 0.0062ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5
LITTELFUSE
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