FMM150-0075X2F [IXYS]
TrenchT2 HiperFET N-Channel Power MOSFET; TrenchT2 HiperFET N沟道功率MOSFET
| 型号： | FMM150-0075X2F |
| 厂家： | 
IXYS CORPORATION |
| 描述： | TrenchT2 HiperFET N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchT2TM HiperFET
N-Channel Power
MOSFET
VDSS = 75V
ID25 = 120A
RDS(on) ≤ 5.8mΩ
trr(typ) = 66ns
FMM150-0075X2F
3
T1
2
5
4
1
Phase Leg Topology
ISOPLUS i4-PakTM
2
Symbol
Test Conditions
Maximum Ratings
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
1
Isolated Tab
5
VISOL
50/60HZ, RMS, t = 1min, Leads-to-Tab
2500
~V
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Features
FC
Mounting Force
20..120 / 4.5..27
N/lb.
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
z Avalanche Rated
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
75
75
V
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
z Low QG
VGSM
Transient
± 30
V
z Low Drain-to-Tab Capacitance
z Low Package Inductance
ID25
IDM
TC = 25°C
120
500
A
A
TC = 25°C, Pulse Width Limited by TJM
Advantages
IA
TC = 25°C
TC = 25°C
115
850
A
z
Easy to Mount
Space Savings
High Power Density
EAS
mJ
z
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
20
V/ns
W
z
170
Applications
z DC-DC Converters
z Battery Chargers
Symbol
CP
Test Conditions
Characteristic Values
z Switched-Mode and Resonant-Mode
Power Supplies
Min.
Typ.
Max.
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
Coupling Capacitance Between Shorted
Pins and Mounting Tab in the Case
40
pF
dS ,dA
dS ,dA
Pin - Pin
Pin - Backside Metal
1.7
5.5
mm
mm
Weight
9
g
DS100186(08/09)
© 2009 IXYS CORPORATION, All Rights Reserved
FMM150-0075X2F
Symbol
Test Conditions
Characteristic Values
ISOPLUS i4-PakTM Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
75
V
V
VGS(th)
IGSS
VDS = VGS, ID = 250μA
VGS = ±20 V, VDS = 0V
VDS = VDSS, VGS = 0V
2.0
4.0
± 200 nA
IDSS
25 μA
TJ = 150°C
250 μA
RDS(on)
gfs
VGS = 10V, ID = 100A, Note 1
VDS = 10V, ID = 60A, Note 1
5.8 mΩ
50
83
S
Ciss
Coss
Crss
10.5
1165
125
nF
pF
pF
VGS = 0V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
23
18
33
15
ns
ns
ns
ns
VGS = 10V, VDS = 0.5 VDSS, ID = 115A
z
RG = 2Ω (External)
Qg(on)
Qgs
178
37
nC
nC
nC
VGS= 10V, VDS = 0.5
z
VDSS, ID = 100A
Qgd
55
Ref: IXYS CO 0077 R0
RthJC
RthCS
0.88 °C/W
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C Unless Otherwise Specified)
Symbol
IS
Test Conditions
VGS = 0V
Min. Typ.
Max.
230
A
A
V
ISM
Repetitive, Pulse Width Limited by TJM
IF = 75A, VGS = 0V, Note 1
900
1.5
VSD
trr
IRM
66
4.4
ns
A
IF = 115A, -di/dt = 100A/μs
VR = 37V, VGS = 0V
QRM
145
nC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
FMM150-0075X2F
Fig. 1. Output Characteristics
@ TJ = 25ºC
Fig. 2. Extended Output Characteristics
@ TJ = 25ºC
360
320
280
240
200
160
120
80
160
140
120
100
80
VGS = 15V
VGS = 15V
10V
10V
8V
7V
8V
7V
6V
6V
5V
4V
60
5V
4V
40
20
40
0
0
0.0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.0
350
0
1
2
3
4
5
6
7
8
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ TJ = 150ºC
Fig. 4. RDS(on) Normalized to ID = 75A Value vs.
Junction Temperature
160
140
120
100
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 15V
VGS = 10V
10V
8V
7V
6V
5V
I D = 150A
I D = 75A
60
4V
3V
40
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 75A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
140
120
100
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
15V - - - -
TJ = 175ºC
60
40
TJ = 25ºC
20
0
-50
-25
0
25
50
75
100
125
150
175
50
100
150
200
250
300
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
FMM150-0075X2F
Fig. 8. Transconductance
Fig. 7. Input Admittance
160
140
120
100
80
140
120
100
80
TJ = - 40ºC
25ºC
150ºC
60
TJ = 150ºC
60
25ºC
40
- 40ºC
40
20
20
0
0
0
20
40
60
80
100
120
140
160
2.0
0.2
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1.6
35
6.0
1.8
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 38V
I
I
D = 100A
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
120
140
160
180
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1000.0
100.0
10.0
1.0
100,000
10,000
1,000
100
RDS(on) Limit
= 1 MHz
f
25µs
C
iss
100µs
1ms
C
C
oss
10ms
100ms
TJ = 175ºC
= 25ºC
DC
T
C
rss
Single Pulse
0.1
5
10
15
20
25
30
1
10
100
VDS - Volts
VDS - Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: FMM150-0075X2F(68)8-28-09
FMM150-0075X2F
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
30
25
20
15
10
5
22
20
18
16
14
12
10
RG = 2ꢀ , VGS = 10V
VDS = 38V
RG = 2Ω , VGS = 10V
VDS = 38V
TJ = 25ºC
I D = 230A
I D = 115A
TJ = 125ºC
110 120 130 140 150 160 170 180 190 200 210 220 230
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
50
45
40
35
30
25
20
15
10
5
55
30
65
60
55
50
45
40
35
30
25
20
15
t r
t
d(on) - - - -
28
26
24
22
20
18
16
14
12
10
tf
t
d(off) - - - -
50
45
40
35
30
25
20
15
10
TJ = 125ºC, VGS = 10V
VDS = 38V
RG = 2Ω, VGS = 10V
I D = 230A, 115A
VDS = 38V
I D = 115A
I D = 230A
25
35
45
55
65
75
85
95
105
115
125
2
4
6
8
10
12
14
16
TJ - Degrees Centigrade
RG - Ohms
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
26
24
22
20
18
16
14
12
10
60
280
240
200
160
120
80
280
240
200
160
120
80
tf
t
d(off) - - - -
tf
t
d(off) - - - -
55
50
45
40
35
30
25
20
RG = 2ꢀ, VGS = 10V
TJ = 125ºC, VGS = 10V
VDS = 38V
VDS = 38V
TJ = 125ºC
I D = 115A
TJ = 25ºC
40
40
I D = 230A
0
0
110 120 130 140 150 160 170 180 190 200 210 220 230
ID - Amperes
2
4
6
8
10
12
14
16
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
FMM150-0075X2F
Fig. 19. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: FMM150-0075X2F(68)8-28-09
相关型号：
FMM151-0075P
Power Field-Effect Transistor, 150A I(D), 75V, 0.0062ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5
LITTELFUSE
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