DSEI8-06AS [IXYS]
Fast Recovery Epitaxial Diode (FRED); 快速恢复外延二极管（ FRED ）
| 型号： | DSEI8-06AS |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode (FRED) |
| 文件： | 总2页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEI 8 IFAVM = 8 A
VRRM = 600 V
Fast Recovery
Epitaxial Diode (FRED)
trr
= 35 ns
TO-263 AA
DSEI 8-06AS
VRSM
V
VRRM
V
Type
C
A
NC
A
640
640
600
600
DSEI 8-06A
DSEI 8-06AS
C (TAB)
Symbol
IFRMS
Test Conditions
Maximum Ratings
TO-220 AC
DSEI 8-06A
C
TVJ = TVJM
16
8
A
A
A
IFAVM
IFRM
①
TC = 115°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
A
C
130
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
100
110
A
A
A = Anode, C = Cathode, NC = No connection
TAB = Cathode
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
85
95
A
A
t = 8.3 ms (60 Hz), sine
I2t
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50
50
A2s
A2s
Features
International standard package
TVJ = 150°C; t = 10 ms (50 Hz), sine
36
37
A2s
A2s
①
t = 8.3 ms (60 Hz), sine
JEDEC TO-220 AC & TO-263 AB
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
①
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
①
①
①
Ptot
Md
TC = 25°C
50
0.4...0.6
2
W
Nm
g
①
Mounting torque
①
Weight
Symbol
IR
Applications
①
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
Test Conditions
Characteristic Values
max.
①
typ.
①
TVJ = 25°C
TVJ = 25°C
VR = VRRM
VR = 0.8 • VRRM
20
10
mA
mA
①
TVJ = 125°C VR = 0.8 • VRRM
1.5
mA
①
VF
IF = 8 A;
TVJ = 150°C
TVJ = 25°C
1.3
1.5
V
V
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
①
①
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.98
28.7
V
mW
①
RthJC
RthCK
RthJA
2.5
K/W
K/W
K/W
Advantages
①
0.5
High reliability circuit operation
Low voltage peaks for reduced
60
50
①
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
trr
IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25°C
35
ns
A
①
IRM
VR = 350 V; IF = 8 A; -diF/dt = 64 A/ms
L £ 0.05 mH; TVJ = 100°C
2.5
2.8
①
①
space saving by reduced cooling
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 2
DSEI 8, 600 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions TO-220 AC
A
B
12.70 14.73 0.500 0.580
14.23 16.51 0.560 0.650
C
D
9.66 10.66 0.380 0.420
3.54 4.08 0.139 0.161
E
F
5.85 6.85 0.230 0.420
2.54 3.42 0.100 0.135
G
H
1.15 1.77 0.045 0.070
-
6.35
-
0.250
J
K
0.64 0.89 0.025 0.035
4.83 5.33 0.190 0.210
L
M
3.56 4.82 0.140 0.190
0.38 0.56 0.015 0.022
N
Q
2.04 2.49 0.080 0.115
0.64 1.39 0.025 0.055
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
Dimension TO-263 AA see DSEI 19
2 - 2
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