DSEK60 [IXYS]

Common Cathode Fast Recovery Epitaxial Diode (FRED); 共阴极快速恢复外延二极管( FRED )
DSEK60
型号: DSEK60
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Common Cathode Fast Recovery Epitaxial Diode (FRED)
共阴极快速恢复外延二极管( FRED )

二极管
文件: 总2页 (文件大小:84K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DSEK 60 IFAVM = 2x 30 A  
VRRM = 600 V  
Common Cathode  
Fast Recovery  
Epitaxial Diode (FRED)  
trr  
= 35 ns  
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
C
A
A
C
A
640  
600  
DSEK 60-06A  
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
IFRMS  
Test Conditions  
Maximum Ratings  
Features  
TVJ = TVJM  
50  
30  
375  
A
A
A
International standard package  
IFAVM  
IFRM  
TC = 85°C; rectangular, d = 0.5  
tP < 10 ms; rep. rating, pulse width limited by TVJM  
JEDEC TO-247 AD  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behavior  
Epoxy meets UL 94V-0  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
300  
320  
A
A
t = 8.3 ms (60 Hz), sine  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
260  
280  
A
A
t = 8.3 ms (60 Hz), sine  
I2t  
TVJ = 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
450  
420  
A2s  
A2s  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
340  
320  
A2s  
A2s  
Applications  
t = 8.3 ms (60 Hz), sine  
Rectifiers in switch mode power  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
Ptot  
Md  
TC = 25°C  
125  
0.8...1.2  
6
W
Nm  
g
Mounting torque  
Advantages  
Weight  
Symbol  
IR  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Low noise switching  
Low losses  
Operating at lower temperature or  
space saving by reduced cooling  
Test Conditions  
Characteristic Values  
max.  
typ.  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C VR = 0.8 • VRRM  
VR = VRRM  
VR = 0.8 • VRRM  
100  
50  
7
mA  
mA  
mA  
VF  
IF = 37 A;  
TVJ = 150°C  
TVJ = 25°C  
1.4  
1.6  
V
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
1.01  
7.1  
V
mW  
RthJC  
RthCK  
RthJA  
1
K/W  
K/W  
K/W  
0.25  
70  
50  
11  
trr  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C  
35  
10  
ns  
A
IRM  
VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms  
L £ 0.05 mH; TVJ = 100°C  
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 2  
DSEK 60, 600 V  
Fig. 1 Forward current  
versus voltage drop.  
Fig. 2 Recovery charge versus -diF/dt.  
Fig. 3 Peak reverse current versus  
-diF/dt.  
Fig. 4 Dynamic parameters versus  
junction temperature.  
Fig. 5 Recovery time versus -diF/dt.  
Fig. 6 Peak forward voltage  
versus diF/dt.  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
J
1.0  
1.4 0.040 0.055  
K
10.8 11.0 0.426 0.433  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
M
N
N
2.2 2.54 0.087 0.102  
Fig. 7 Transient thermal impedance junction to case.  
© 2000 IXYS All rights reserved  
2 - 2  

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