DSAI35 [IXYS]
Rectifier Diode Avalanche Diode; 整流二极管雪崩二极管
| 型号： | DSAI35 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode Avalanche Diode |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DS 35
DSA 35
DSI 35
DSAI 35
VRRM = 800-1800 V
IF(RMS) = 80 A
IF(AV)M = 49 A
Rectifier Diode
Avalanche Diode
DO-203 AB
VRSM
V
V(BR)min ① VRRM
Anode
Cathode
on stud
C
A
A
C
V
V
on stud
DS
DSA
DSI
DSAI
900
1300
-
-
800
1200
DS35-08A
DS35-12A
DSI35-08A
DSI35-12A
1300
1700
1900
1300
1750
1950
1200
1600
1800
DSA35-12A
DSA35-16A
DSA35-18A
DSAI35-12A
DSAI35-16A
DSAI35-18A
1/4-28UNF
① Only for Avalanche Diodes
A = Anode C = Cathode
Symbol
Test Conditions
TVJ = TVJM
Tcase = 100°C; 180° sine
Maximum Ratings
IF(RMS)
IF(AVM)
80
49
A
A
Features
①
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
PRSM
IFSM
DSA(I) types, TVJ = TVJM, tp = 10 ms
11
kW
①
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
650
690
A
A
VR = 0
Applications
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
600
640
A
A
①
High power rectifiers
Field supply for DC motors
①
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2100
2000
A2s
A2s
①
Power supplies
Advantages
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1800
1700
A2s
A2s
①
Space and weight savings
Simple mounting
Improved temperature and power
cycling
①
①
TVJ
TVJM
Tstg
-40...+180
180
-40...+180
°C
°C
°C
①
Reduced protection circuits
Md
Mounting torque
4.5-5.5
40-49
15
Nm
lb.in.
g
Dimensions in mm (1 mm = 0.0394")
Weight
Symbol
Test Conditions
Characteristic Values
IR
TVJ = TVJM; VR = VRRM
IF = 150 A; TVJ = 25°C
£
£
4
mA
V
VF
1.55
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.85
4.5
V
mW
RthJC
RthJH
DC current
DC current
1.05
1.25
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
4.05
3.9
100
mm
mm
m/s2
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1 - 2
© 2000 IXYS All rights reserved
DS 35
DSA 35
DSI 35
DSAI 35
250
A
1000
10000
50Hz, 80% VRRM
VR = 0 V
2
A
A s
typ. lim.
200
800
700
6000
IF
I2t
IFSM
4000
2000
1000
150
100
50
600
500
400
300
200
100
0
TVJ = 45°C
TVJ= 180°C
TVJ= 25°C
TVJ = 180°C
TVJ = 45°C
TVJ = 180°C
0
0.5
10-3
10-2
10-1
s
100
200
102
1
2
3
4
5 6 7 10
ms
V
1.0
1.5
VF
2.0
t
t
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
FSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
I
100
W
60
A
RthJA
:
50
80
PF
1.5 K/W
1.9 K/W
2.3 K/W
3.9 K/W
IF(AV)M
40
30
20
10
0
60
40
20
0
DC
180° sin
120°
60°
30°
0
0
°C
0
20
40
60
80 A
50
100
150
0
40
80
120
160 °C 200
Tcase
Tamb
IF(AV)M
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case
temperature 180° sine
2.0
K/W
RthJH for various conduction angles d:
1.6
d
RthJH (K/W)
ZthJH
1.2
DC
180°
120°
60°
1.25
1.37
1.47
1.74
2.08
30°
0.8
0.4
0.0
Constants for ZthJH calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.10
0.25
0.70
0.20
0.0012
0.1181
0.6540
2.0
10-3
10-2
10-1
100
101
s
t
Fig. 6 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2 - 2
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