DSAI75-16B [IXYS]
Rectifier Diode Avalanche Diode; 整流二极管雪崩二极管
| 型号： | DSAI75-16B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode Avalanche Diode |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DS 75
DSA 75
DSI 75
DSAI 75
VRRM = 800-1800 V
IF(RMS) = 160 A
IF(AV)M = 110 A
Rectifier Diode
Avalanche Diode
DO-203 AB
VRSM
V
V(BR)min ① VRRM
Anode
Cathode
on stud
C
A
A
C
V
V
on stud
DS
DSA
DSI
DSAI
900
1300
-
-
800
1200
DS75-08B
DS75-12B
DSI75-08B
DSI75-12B
1300
1700
1900
1300
1760
1950
1200
1600
1800
DSA75-12B
DSA75-16B
DSA75-18B
DSAI75-12B
DSAI75-16B
DSAI75-18B
① Only for Avalanche Diodes
1/4-28UNF
A = Anode C = Cathode
Symbol
Test Conditions
TVJ = TVJM
Tcase = 100°C; 180° sine
Maximum Ratings
IF(RMS)
IF(AV)M
160
110
A
A
Features
①
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
PRSM
IFSM
DSA(I) types, TVJ = TVJM, tp = 10 ms
20
kW
①
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1400
1500
A
A
VR = 0
Applications
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1250
1310
A
A
①
High power rectifiers
Field supply for DC motors
①
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9800
9450
A2s
A2s
①
Power supplies
Advantages
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7820
7210
A2s
A2s
①
Space and weight savings
Simple mounting
Improved temperature and power
cycling
①
①
TVJ
TVJM
Tstg
-40...+180
180
-40...+180
°C
°C
°C
①
Reduced protection circuits
Md
Mounting torque
2.4-4.5
21-40
21
Nm
lb.in.
g
Dimensions in mm (1 mm = 0.0394")
Weight
Symbol
Test Conditions
Characteristic Values
IR
TVJ = TVJM; VR = VRRM
IF = 150 A; TVJ = 25°C
£
£
6
mA
V
VF
1.17
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.75
2
V
mW
RthJC
RthJH
DC current
DC current
0.5
0.9
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
4.05
3.9
100
mm
mm
m/s2
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
744
1 - 2
© 2000 IXYS All rights reserved
DS 75
DSA 75
DSI 75
DSAI 75
200
A
1500
A
105
A2s
50Hz, 80%VRRM
VR = 0 V
typ.
lim.
TVJ = 45°C
6
4
IFSM
150
100
50
IF
TVJ = 45°C
I2t
TVJ = 180°C
1000
500
0
TVJ=180°C
TVJ= 25°C
TVJ = 180°C
2
0
104
0.0
0.5
1.0
VF
1.5
10-3
10-2
10-1
s
100
200
103
1
2
3
4
5 6 7 10
ms
t
V
t
Fig. 1 Forward characteristics
Fig. 2 Surgeoverloadcurrent
IFSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
200
W
200
A
RthJA
:
IF(AV)M
DC
180° sin
120°
60°
1 K/W
150
PF
150
100
50
1.2 K/W
1.6 K/W
2 K/W
30°
3 K/W
100
50
0
4 K/W
DC
180° sin
120°
60°
30°
0
0
°C
0
50
100
150
IF(AV)M
A
00
50
100
150
0
40
80
120
160 °C 200
Tcase
Tamb
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case
temperature
1.5
K/W
30°
RthJH for various conduction angles d:
60°
120°
180°
DC
d
RthJH (K/W)
ZthJH
1.0
DC
180°
120°
60°
0.900
1.028
1.085
1.272
1.476
30°
0.5
Constants for ZthJH calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0731
0.1234
0.4035
0.3000
0.0015
0.0237
0.4838
1.5
0.0
10-3
10-2
10-1
100
101
102
s
t
Fig. 6 Transientthermalimpedancejunctiontoheatsink
2 - 2
© 2000 IXYS All rights reserved
相关型号：
DSAI75-18A
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 100A, 1800V V(RRM), Silicon, DO-203AB
IXYS
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