DSAI17-12A [IXYS]
Rectifier Diode Avalanche Diode; 整流二极管雪崩二极管
| 型号： | DSAI17-12A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode Avalanche Diode |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DS 17
DSA 17
DSI 17
DSAI 17
VRRM = 800-1800 V
IF(RMS)= 40 A
IF(AV)M = 25 A
Rectifier Diode
Avalanche Diode
DO-203 AA
VRSM
V
V(BR)min ① VRRM
Anode
Cathode
on stud
C
A
A
C
V
V
on stud
DS
DSA
DSI
DSAI
900
1300
-
-
800
1200
DS17-08A
DS17-12A
DSI17-08A
DSI17-12A
1300
1700
1900
1300
1750
1950
1200
1600
1800
DSA17-12A
DSA17-16A
DSA17-18A
DSAI17-12A
DSAI17-16A
DSAI17-18A
10-32UNF
① Only for Avalanche Diodes
A = Anode C = Cathode
Symbol
Test Conditions
TVJ = TVJM
Tcase = 125°C; 180° sine
Maximum Ratings
IF(RMS)
IF(AV)M
40
25
A
A
Features
①
International standard package,
JEDEC DO-203 AA (DO-4)
Planar glassivated chips
PRSM
IFSM
DSA(I) types, TVJ = TVJM, tp = 10 ms
7
kW
①
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
370
400
A
A
VR = 0
Applications
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
300
320
A
A
①
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
①
①
①
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
680
660
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
430
A2s
A2s
Advantages
①
Space and weight savings
Simple mounting
Improved temperature and power
①
TVJ
TVJM
Tstg
-40...+180
180
-40...+180
°C
°C
°C
①
cycling
Reduced protection circuits
①
Md
Mounting torque
2.2-2.8
19-25
6
Nm
lb.in.
g
Weight
Dimensions in mm (1 mm = 0.0394")
Symbol
Test Conditions
Characteristic Values
IR
TVJ = TVJM; VR = VRRM
IF = 55 A; TVJ = 25°C
£
£
4
mA
V
VF
1.36
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.85
8
V
mW
RthJC
RthJH
DC current
DC current
1.5
2.1
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
2.05
2.05
100
mm
mm
m/s2
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1 - 2
© 2000 IXYS All rights reserved
DS 17
DSA 17
DSI 17
DSAI 17
100
A
400
A
1000
typ. lim.
VR = 0 V
50Hz, 80% VRRM
2
8
A s
80
600
TVJ = 45°C
300
I2t
IF
IFSM
TVJ = 45°C
TVJ= 180°C
TVJ= 25°C
400
200
100
60
40
20
0
200
100
0
TVJ = 180°C
TVJ = 180°C
10-3
10-2
10-1
s
100
200
102
1
2
3
4
5 6 7 10
ms
t
V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.8
VF
t
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
FSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
I
50
W
40
A
RthJA
:
2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
40
PF
30
IF(AV)M
30
8.5 K/W
Cu 80x80
20
10
0
20
DC
180° sin
120°
60°
30°
10
0
0
50
°C
0
10
20
30
40 A
IF(AV)M
50
100
150
0
50
100
150
°C
Tcase
Tamb
Fig. 4 Power dissipation versus forward current and ambient temperature
Fig. 5 Max. forward current at case
temperature 180° sine
RthJH for various conduction angles d:
K/W
d
RthJH (K/W)
DC
180°
120°
60°
2.10
2.23
2.33
2.53
2.72
2
ZthJH
30°
Constants for ZthJH calculation:
1
i
Rthi (K/W)
ti (s)
1
2
3
4
0.1006
0.5311
0.8683
0.600
0.0021
0.0881
2.968
3.20
0
10-3
10-2
10-1
100
101
s
t
Fig. 6 Transient thermal impedance junction to heatsink
2 - 2
© 2000 IXYS All rights reserved
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