概述
数据手册DGS10-03A 概述
Gallium Arsenide Schottky Rectifier 砷化镓肖特基整流器
DGS10-03A 数据手册
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PDF下载DGS 9-03AS
DGS 10-03A
IFAV
VRRM
= 11 A
= 300 V
Gallium Arsenide Schottky Rectifier
CJunction = 9 pF
Type
Marking on product
Circuit
Package
A = Anode, C = Cathode , TAB = Cathode
A
A
C
A
DGS 9-03AS
DGS 10-03A
9A300AS
TO-252 AA
A
C(TAB)
C
TO-220 AC
C
A
DGS 10-03A
C(TAB)
Symbol
VRRM/RSM
Conditions
Maximum Ratings
Features
●
Low forward voltage
Very high switching speed
300
V
●
●
IFAV
IFAV
TC = 25°C; DC
TC = 90°C; DC
11
8
A
A
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
●
●
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
20
A
TVJ
Tstg
-55...+175
-55...+150
°C
°C
●
●
High temperature operation capability
Epoxy meets UL 94V-0
Ptot
Md
TC = 25°C
34
W
mounting torque (TO-220)
0.4...0.6
Nm
Applications
●
MHz switched mode power supplies
Symbol
IR ꢀ
VF
Conditions
Characteristic Values
(SMPs)
Small size SMPs
High frequency converters
Resonant converters
typ.
max.
●
●
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
1.3
mA
mA
●
1.3
IF = 5 A;
IF = 5 A;
TVJ = 125°C
TVJ = 25°C
1.6
1.6
V
V
2
CJ
VR = 150 V; TVJ = 125°C
9
pF
RthJC
RthCH
4.4
K/W
K/W
TO-220
0.5
Weight
TO-252
TO-220
0.3
2
g
g
Pulse test: ꢀ Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
DGS 9-03AS
DGS 10-03A
OutlinesTO-220AC
100
1000
pF
A
10
CJ
IF
100
10
1
TVJ = 125°C
1
0,1
TVJ
=
125°C
25°C
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
0,01
A
B
12.70 14.73 0.500 0.580
14.23 16.51 0.560 0.650
V
2,5
0,0
0,5
1,0
1,5
2,0
0,1
1
10
100
VR
1000
V
VF
C
D
9.66 10.66 0.380 0.420
3.54 4.08 0.139 0.161
Fig. 1typ. forward characteristics
Fig. 2 typ. junction capacity
E
F
5.85 6.85 2.300 0.420
2.54 3.42 0.100 0.135
versus blocking voltage
G
H
1.15 1.77 0.045 0.070
-
6.35
-
0.250
10
J
K
0.64 0.89 0.025 0.035
4.83 5.33 0.190 0.210
TO-252
K/W
L
M
3.56 4.82 0.140 0.190
0.51 0.76 0.020 0.030
TO-220
1
N
Q
2.04 2.49 0.080 0.115
0.64 1.39 0.025 0.055
ZthJC
0,1
Single Pulse
Outlines TO-252 AA
0,01
DGS9-03AS
0,00001
0,0001
0,001
0,01
0,1
1
s
10
t
1Anode
2 NC
Fig. 3 typ. thermal impedance junction to case
3Anode
4 Cathode
Dim. Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
A2
b
0
0.64
0.13
0.89
0
0.005
0.035
0.025
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
e
e1
2.28BSC
4.57BSC
0.090BSC
0.180BSC
H
L
9.40 10.42
0.370
0.020
0.410
0.040
0.51
1.02
L1
L2
L3
0.64
0.89
2.54
1.02
1.27
2.92
0.025
0.035
0.100
0.040
0.050
0.115
© 2004 IXYS All rights reserved
2 - 2
DGS10-03A 相关器件
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| DGS20-015AS | IXYS | Gallium Arsenide Schottky Rectifier | 获取价格 |
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| DGS20-018A | IXYS | Rectifier Diode, Schottky, 1 Phase, 1 Element, 23A, 180V V(RRM), Gallium Arsenide, TO-220AC, PLASTIC PACKAGE-2 | 获取价格 |
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| DGS20-018AS | IXYS | Gallium Arsenide Schottky Rectifier | 获取价格 |
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| DGS20-022A | IXYS | Gallium Arsenide Schottky Rectifier | 获取价格 |
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| DGS20-022A | LITTELFUSE | Rectifier Diode, Schottky, 1 Phase, 1 Element, 18A, 220V V(RRM), Gallium Arsenide, TO-220AC, PLASTIC, TO-220AC, 2 PIN | 获取价格 |
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| DGS20-022AS | LITTELFUSE | Rectifier Diode, Schottky, 1 Phase, 1 Element, 9A, 220V V(RRM), Gallium Arsenide, TO-263AB, TO-263AB, 3 PIN | 获取价格 |
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