DGS20-018AS [IXYS]
Gallium Arsenide Schottky Rectifier; 砷化镓肖特基整流器
| 型号： | DGS20-018AS |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Gallium Arsenide Schottky Rectifier |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DGS 20-018AS
IFAV
VRRM
= 23 A
= 180 V
Gallium Arsenide Schottky Rectifier
CJunction = 33 pF
Preliminary Data
VRSM
V
VRRM
V
Type
TO-263 AB
A
C
A
A
180
180
DGS 20-018AS
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
Conditions
Maximum Ratings
Features
Low forward voltage
●
●
●
IFAV
IFAV
TC = 25°C; DC
TC = 90°C; DC
23
17
A
A
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
30
A
●
●
TVJ
Tstg
-55...+175
-55...+150
°C
°C
●
●
High temperature operation capability
Epoxy meets UL 94V-0
Ptot
TC = 25°C
48
W
Applications
●
MHz Switched mode power supplies
(SMPs)
Small size SMPs
High frequency converters
Resonant converters
●
●
●
Symbol
IR ꢀ
VF
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
2.0
mA
mA
2.0
IF = 7.5 A;
IF = 7.5 A;
TVJ = 125°C
TVJ = 25°C
0.8
0.8
V
V
1.0
3.1
CJ
VR = 100 V; TVJ = 125°C
33
pF
K/W
g
RthJC
Weight
2
Pulse test: ꢀPulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2001 IXYS All rights reserved
1 - 2
DGS 20-018AS
30
400
pF
10
A
CJ
IF
100
1
TVJ
=
125°C
25°C
0.1
TVJ = 125°C
0.01
0.0
10
0.1
V
0.5
1.0
1.5
VF
2.0
1
10
100
VR
1000
V
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
10
Outline TO-263 AB
K/W
Single Pulse
1
ZthJC
0.1
0.01
DGS10-015/018BS
0.00001
0.0001
0.001
0.01
0.1
1
s
t
10
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
Fig. 3 typ. thermal impedance junction to case
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.315
.380
.350
E
E1
e
9.65
6.22
2.54 BSC
10.29
8.13
.380
.245
.100 BSC
.405
.320
Rectifier Diode
GaAs Schottky Diode
conduction
forward characteristics
turn off characteristics
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
.575
.090
.040
.050
0
.625
L1
L2
L3
L4
.110
.055
.070
.008
R
0.46
0.74
.018
.029
turn on characteristics
© 2001 IXYS All rights reserved
2 - 2
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